DOMAIN WALL MOVEMENT ELEMENT AND MAGNETIC ARRAY
A domain wall movement element according to the present embodiment is provided with a domain wall movement layer within which a domain wall is formed, a ferromagnetic layer, and a non-magnetic layer sandwiched between the domain wall movement layer and the ferromagnetic layer. A first surface of the...
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Main Authors | , |
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Format | Patent |
Language | English French Japanese |
Published |
09.02.2023
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Abstract | A domain wall movement element according to the present embodiment is provided with a domain wall movement layer within which a domain wall is formed, a ferromagnetic layer, and a non-magnetic layer sandwiched between the domain wall movement layer and the ferromagnetic layer. A first surface of the domain wall movement layer on the ferromagnetic layer side is curved at at least a part of a position that overlaps the ferromagnetic layer in a plan view from the direction of lamination.
Un mode de réalisation de la présente invention concerne un élément de déplacement de paroi de domaine comprenant une couche de mouvement de paroi de domaine à l'intérieur de laquelle une paroi de domaine est formée, une couche ferromagnétique, et une couche non magnétique prise en sandwich entre la couche de déplacement de paroi de domaine et la couche ferromagnétique. Une première surface de la couche de déplacement de paroi de domaine sur le côté de la couche ferromagnétique est incurvée au niveau d'au moins une partie d'une position qui chevauche la couche ferromagnétique dans une vue en plan à partir de la direction de stratification.
本実施形態にかかる磁壁移動素子は、内部に磁壁が形成される磁壁移動層と、強磁性層と、前記磁壁移動層と前記強磁性層とに挟まれる非磁性層と、を備え、前記磁壁移動層の前記強磁性層側の第1面は、積層方向から平面視で前記強磁性層と重なる位置の少なくとも一部で湾曲している。 |
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AbstractList | A domain wall movement element according to the present embodiment is provided with a domain wall movement layer within which a domain wall is formed, a ferromagnetic layer, and a non-magnetic layer sandwiched between the domain wall movement layer and the ferromagnetic layer. A first surface of the domain wall movement layer on the ferromagnetic layer side is curved at at least a part of a position that overlaps the ferromagnetic layer in a plan view from the direction of lamination.
Un mode de réalisation de la présente invention concerne un élément de déplacement de paroi de domaine comprenant une couche de mouvement de paroi de domaine à l'intérieur de laquelle une paroi de domaine est formée, une couche ferromagnétique, et une couche non magnétique prise en sandwich entre la couche de déplacement de paroi de domaine et la couche ferromagnétique. Une première surface de la couche de déplacement de paroi de domaine sur le côté de la couche ferromagnétique est incurvée au niveau d'au moins une partie d'une position qui chevauche la couche ferromagnétique dans une vue en plan à partir de la direction de stratification.
本実施形態にかかる磁壁移動素子は、内部に磁壁が形成される磁壁移動層と、強磁性層と、前記磁壁移動層と前記強磁性層とに挟まれる非磁性層と、を備え、前記磁壁移動層の前記強磁性層側の第1面は、積層方向から平面視で前記強磁性層と重なる位置の少なくとも一部で湾曲している。 |
Author | SHIBATA Tatsuo OTA Minoru |
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DocumentTitleAlternate | 磁壁移動素子および磁気アレイ ÉLÉMENT DE DÉPLACEMENT DE PAROI DE DOMAINE ET RÉSEAU MAGNÉTIQUE |
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Snippet | A domain wall movement element according to the present embodiment is provided with a domain wall movement layer within which a domain wall is formed, a... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | DOMAIN WALL MOVEMENT ELEMENT AND MAGNETIC ARRAY |
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