METAL ETCH IN HIGH ASPECT-RATIO FEATURES

• Main Authors: CHEN, Xiaolin C, CUI, Zhenjiang, WANG, Baiwei, WANG, Anchuan, REDDY, Rohan Puligoru, JAN, Oliver
• Format: Patent
• Language: English; French
• Published: 10.11.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Exemplary methods of etching may include flowing a fluorine-containing precursor and a secondary gas into a processing region of a semiconductor processing chamber. The secondary gas may be or include oxygen or nitrogen. A flow rate ratio of the fluorine-containing precursor to the secondary gas may...