MEMORY DEVICES WITH GRADIENT-DOPED CONTROL GATE MATERIAL

Disclosed herein are memory devices with gradient-doped control gate material, as well as related methods and devices. In some embodiments, a memory device may include a first isolation material, a second isolation material, and a control gate material between the first isolation material and the se...

Full description

Saved in:
Bibliographic Details
Main Authors KIOUSSIS, Dimitri, JAYANTI, Srikant, SCHROEDER, Jeremy, ROY BARMAN, Arkajit, PAVLOPOULOS, Dimitrios
Format Patent
LanguageEnglish
French
Published 16.06.2022
Subjects
ELECTRICITY
Online AccessGet full text

Cover

More Information
Summary:Disclosed herein are memory devices with gradient-doped control gate material, as well as related methods and devices. In some embodiments, a memory device may include a first isolation material, a second isolation material, and a control gate material between the first isolation material and the second isolation material along an axis. The control gate material may include a dopant having a non-uniform concentration along the axis. L'invention concerne des dispositifs de mémoire avec un matériau de grille de commande dopé par gradient, ainsi que des procédés et des dispositifs associés. Dans certains modes de réalisation, un dispositif de mémoire peut comprendre un premier matériau d'isolation, un second matériau d'isolation et un matériau de grille de commande entre le premier matériau d'isolation et le second matériau d'isolation le long d'un axe. Le matériau de grille de commande peut comprendre un dopant ayant une concentration non uniforme le long de l'axe.
Bibliography:Application Number: WO2020CN135345