LIGHT-EMITTING DIODE EPITAXIAL WAFER AND PREPARATION METHOD THEREFOR

• Main Authors: MEI, Jing, DONG, Binzhong, WANG, Qian, HONG, Weiwei, ZHANG, Yi
• Format: Patent
• Language: Chinese; English; French
• Published: 17.03.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Disclosed are a light-emitting diode epitaxial wafer and a preparation method therefor, which belong to the field of light-emitting diode manufacturing. The light-emitting diode epitaxial wafer comprises a substrate, and an n-type GaN layer, a multi-quantum well layer, an AlGaN electron blocking layer and a p-type GaN layer which are sequentially stacked on the substrate, wherein a plurality of hole injection grooves distributed at intervals are provided on the p-type GaN layer, and each of the hole injection grooves extends from the p-type GaN layer to the multi-quantum well layer; and the light-emitting diode epitaxial wafer further comprises a plurality of GaN hole injection structures, and the plurality of GaN hole injection structures are distributed in the plurality of hole injection grooves in a one-to-one correspondence. La présente invention concerne une tranche épitaxiale de diode électroluminescente et son procédé de préparation, qui se rapportent au domaine de la fabrication de diodes électrolumin