METHOD FOR PREPARING CSPBBR3 PEROVSKITE FILMS USING CHEMICAL VAPOUR DEPOSITION

• Main Authors: HEVIA ZAMORA, Samuel Alejandro, FERNÁNDEZ IZQUIERDO, Leunam
• Format: Patent
• Language: English; French; Spanish
• Published: 03.02.2022
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The present invention relates to a method for preparing films of perovskite having structure CsPbBr3, which comprises the use of chemical vapour deposition (CVD) using previously synthesised CsPbBr3 crystals as precursor material. La presente invención se dirige a un método para preparar películas de perovskita de estructura CsPbBr3, que comprende emplear Deposición Química en fase de Vapor (CVD) usando como material precursor cristales de CsPbBr3 previamente sintetizados. La présente invention concerne un procédé pour préparer des films de pérovskite de structure CsPbBr3, qui consiste à utiliser un dépôt chimique en phase vapeur (CVD) faisant appel à des cristaux de CsPbBr3 préalablement synthétisés, en tant que matériau précurseur.