CLEANING METHOD AND MICROWAVE PLASMA TREATMENT DEVICE

• Main Authors: HONDA, Minoru, NOGAMI, Takafumi
• Format: Patent
• Language: English; French; Japanese
• Published: 25.02.2021
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

This cleaning method of a chamber for treating a substrate with microwave plasma involves a step for introducing a cleaning gas that contains a fluorine-containing gas, argon gas and helium gas, and a step for supplying microwave power; in the step for introducing the cleaning gas, the flow ratio of helium gas to argon gas is set within the range 2/3 to 9. Ce procédé de nettoyage d'une chambre pour traiter un substrat avec un plasma micro-onde comprend une étape d'introduction d'un gaz de nettoyage qui contient un gaz contenant du fluor, de l'argon gazeux et de l'hélium gazeux, et une étape d'alimentation en énergie micro-onde. Dans l'étape d'introduction du gaz de nettoyage, le rapport d'écoulement de l'hélium gazeux à l'argon gazeux est réglé dans la plage de 2/3 à 9. マイクロ波プラズマにより基板を処理するチャンバのクリーニング方法であって、フッ素含有ガス、アルゴンガス及びヘリウムガスを含むクリーニングガスを導入する工程と、マイクロ波パワーを供給する工程と、を有し、前記クリーニングガスを導入する工程は、ヘリウムガスのアルゴンガスに対する流量比を２／３～９の範囲内にする、クリーニング方法が提供される。