SEMICONDUCTOR DEVICE
The purpose of the present invention is to eliminate an influence due to a difference in coefficient of linear expansion between a substrate and another material, and to secure a stable mounting structure for a semiconductor element. This semiconductor device is provided with a glass substrate, and...
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Format | Patent |
Language | English French Japanese |
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17.09.2020
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Abstract | The purpose of the present invention is to eliminate an influence due to a difference in coefficient of linear expansion between a substrate and another material, and to secure a stable mounting structure for a semiconductor element. This semiconductor device is provided with a glass substrate, and a semiconductor element. The glass substrate is provided with a through-hole that passes through the front and rear surfaces. The glass substrate is further provided with a step section on the outer circumference of the through-hole. The semiconductor element is bonded to the step section of the glass substrate. When an imaging element is used as the semiconductor element, for example, focus deviation of light incident on the imaging element is prevented, whereby the image quality of an image obtained by imaging is improved.
L'objectif de la présente invention est d'éliminer une influence due à une différence de coefficient de dilatation linéaire entre un substrat et un autre matériau, et d'assurer une structure de montage stable pour un élément semi-conducteur. Le dispositif à semi-conducteurs est muni d'un substrat de verre et d'un élément semi-conducteur. Le substrat de verre est muni d'un trou traversant qui traverse les surfaces avant et arrière. Le substrat de verre est en outre muni d'une section étagée sur la circonférence externe du trou traversant. L'élément semi-conducteur est lié à la section étagée du substrat de verre. Lorsqu'un élément d'imagerie est utilisé comme élément semi-conducteur, par exemple, un écart de focalisation d'une lumière incidente sur l'élément d'imagerie est évité, moyennant quoi la qualité d'image d'une image obtenue par imagerie est améliorée.
基板と他の材料との間の線膨張係数差に起因する影響を解消して、半導体素子の安定した実装構造を確保する。 半導体装置は、ガラス基板と半導体素子とを備える。ガラス基板は、表裏面を貫通する貫通孔を備える。また、ガラス基板は、貫通孔の外周に段差部を備える。半導体素子は、ガラス基板の段差部に接合される。半導体素子として、例えば撮像素子を用いた場合、撮像素子に入射する光の焦点ずれを防止することにより、撮像により得られる画像の画質を向上させる。 |
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AbstractList | The purpose of the present invention is to eliminate an influence due to a difference in coefficient of linear expansion between a substrate and another material, and to secure a stable mounting structure for a semiconductor element. This semiconductor device is provided with a glass substrate, and a semiconductor element. The glass substrate is provided with a through-hole that passes through the front and rear surfaces. The glass substrate is further provided with a step section on the outer circumference of the through-hole. The semiconductor element is bonded to the step section of the glass substrate. When an imaging element is used as the semiconductor element, for example, focus deviation of light incident on the imaging element is prevented, whereby the image quality of an image obtained by imaging is improved.
L'objectif de la présente invention est d'éliminer une influence due à une différence de coefficient de dilatation linéaire entre un substrat et un autre matériau, et d'assurer une structure de montage stable pour un élément semi-conducteur. Le dispositif à semi-conducteurs est muni d'un substrat de verre et d'un élément semi-conducteur. Le substrat de verre est muni d'un trou traversant qui traverse les surfaces avant et arrière. Le substrat de verre est en outre muni d'une section étagée sur la circonférence externe du trou traversant. L'élément semi-conducteur est lié à la section étagée du substrat de verre. Lorsqu'un élément d'imagerie est utilisé comme élément semi-conducteur, par exemple, un écart de focalisation d'une lumière incidente sur l'élément d'imagerie est évité, moyennant quoi la qualité d'image d'une image obtenue par imagerie est améliorée.
基板と他の材料との間の線膨張係数差に起因する影響を解消して、半導体素子の安定した実装構造を確保する。 半導体装置は、ガラス基板と半導体素子とを備える。ガラス基板は、表裏面を貫通する貫通孔を備える。また、ガラス基板は、貫通孔の外周に段差部を備える。半導体素子は、ガラス基板の段差部に接合される。半導体素子として、例えば撮像素子を用いた場合、撮像素子に入射する光の焦点ずれを防止することにより、撮像により得られる画像の画質を向上させる。 |
Author | OKA, Shuichi KAKOIYAMA, Naoki |
Author_xml | – fullname: OKA, Shuichi – fullname: KAKOIYAMA, Naoki |
BookMark | eNrjYmDJy89L5WQQCXb19XT293MJdQ7xD1JwcQ3zdHblYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXx4f5GBkYGhhbGFhaGjobGxKkCAMmcIVo |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
DocumentTitleAlternate | 半導体装置 DISPOSITIF À SEMI-CONDUCTEURS |
ExternalDocumentID | WO2020183881A1 |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_WO2020183881A13 |
IEDL.DBID | EVB |
IngestDate | Fri Sep 06 06:15:09 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English French Japanese |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_WO2020183881A13 |
Notes | Application Number: WO2020JP00408 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200917&DB=EPODOC&CC=WO&NR=2020183881A1 |
ParticipantIDs | epo_espacenet_WO2020183881A1 |
PublicationCentury | 2000 |
PublicationDate | 20200917 |
PublicationDateYYYYMMDD | 2020-09-17 |
PublicationDate_xml | – month: 09 year: 2020 text: 20200917 day: 17 |
PublicationDecade | 2020 |
PublicationYear | 2020 |
RelatedCompanies | SONY SEMICONDUCTOR SOLUTIONS CORPORATION |
RelatedCompanies_xml | – name: SONY SEMICONDUCTOR SOLUTIONS CORPORATION |
Score | 3.413395 |
Snippet | The purpose of the present invention is to eliminate an influence due to a difference in coefficient of linear expansion between a substrate and another... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC COMMUNICATION TECHNIQUE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PICTORIAL COMMUNICATION, e.g. TELEVISION SEMICONDUCTOR DEVICES |
Title | SEMICONDUCTOR DEVICE |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200917&DB=EPODOC&locale=&CC=WO&NR=2020183881A1 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQSTJLMQbGZopuklliiq6JmYmZbqKZWbJuUopRkmWioUGqEXhM19fPzCPUxCvCNIKJIQe2FwZ8Tmg5-HBEYI5KBub3EnB5XYAYxHIBr60s1k_KBArl27uF2LqoQXvHoKF-Q3M1Fydb1wB_F39nNWdnYL9NzS8ILAdMvRYWho7AvhIrsCFtDsoPrmFOoH0pBciVipsgA1sA0Ly8EiEGpqxEYQZOZ9jda8IMHL7QKW8gE5r7ikUYRIJBgebv5xLqHOIfpODiGubp7CrKoOzmGuLsoQs0Ph7um_hwf2S3GIsxsAD7-akSDArA2tTUKDXF2MAS2GlLTjFINLdITTK1NEgySLUwSTYzlGSQwWeSFH5paQYuEBe01MHQXIaBpaSoNFUWWJ-WJMmBgwEAY-11JQ |
link.rule.ids | 230,309,783,888,25576,76876 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dT8IwEL8QNOKbgkYUlUSzt8V9dtsDMdJtGco2ggN5W9atDxqjRGb89702oDzx1vSSS3vt9fq73l0BbhmpTFzNSmWkqFSLWEQtCClVVhnMK3SNG9KnGyckmlmPC3vRgPdNLoysE_ojiyOiRpWo77U8r5f_Tixfxlau7tgrdn3eh9nAV9boWLj6dUfxh4NgkvopVShF3KYkU0nD3eu6-gNipT28ZDtCH4L5UOSlLLeNSngE-xPk91EfQ-OtaEOLbv5ea8NBvH7yxuZa-1Yd6DwLoaWJP6NZOu37wXxEgxO4CYOMRiqyz_9mk7-k22MxT6GJOJ-fQR-tqW3wytQ8BG1lpRWOy5ntaUzjrlUSvQu9XZzOd5OvoRVl8Tgfj5KnCzgUJBH2oDs9aNZf3_wSbWvNrqRIfgEMlHgY |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=SEMICONDUCTOR+DEVICE&rft.inventor=OKA%2C+Shuichi&rft.inventor=KAKOIYAMA%2C+Naoki&rft.date=2020-09-17&rft.externalDBID=A1&rft.externalDocID=WO2020183881A1 |