MEMORY CONTROL CIRCUIT FOR USE IN STORAGE DEVICE

• Main Authors: ZHOU, Wei, SHAN, Mingxing, FAN, Xi
• Format: Patent
• Language: Chinese; English; French
• Published: 31.10.2019
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

A memory control circuit (400), relating to the field of digital circuits, and being used for reading and writing data in a non-volatile memory (160), comprising an XNOR circuit (420) and a read/write control circuit (440). The XNOR circuit (420) is used for performing bitwise XNOR operations on a plurality of data blocks and producing redundant data blocks, and the read/write control circuit (440) is used for writing the plurality of data blocks and redundant data blocks to the non-volatile memory (160) and reading the plurality of data blocks in the non-volatile memory (160), the plurality of data blocks and the redundant data blocks being stored in a storage unit. The non-volatile memory (160) comprises a plurality of storage units, each storage unit having a capacity of n bits and having 2n storage states, the number of the plurality of data blocks being n-1, and n being an integer greater than or equal to 2. As only 2n-1 storage states in each storage unit are used for storing data, the difference of the