SEMICONDUCTOR LIGHT EMITTING ELEMENT

• Main Authors: TAKAHASHI, Kunimasa, YOSHIDA, Shinji, TAKAYAMA, Toru
• Format: Patent
• Language: English; French; Japanese
• Published: 03.10.2019
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY

This semiconductor light emitting element (100) is provided with: a GaN substrate (11); a first semiconductor layer (12) disposed on the GaN substrate (11) and comprising a nitride-based semiconductor of a first conduction type; an active layer (15) disposed on the first semiconductor layer (12) and...