METHOD FOR SUPPLYING RAW MATERIAL AND METHOD FOR PRODUCING SILICON MONOCRYSTAL
This method for supplying a raw material comprises a solidification step for solidifying the surface of a silicon melt, a dropping step for dropping a solid raw material to a solidified portion formed in the solidification step, and a melting step for melting the solidified portion and the solid raw...
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Format | Patent |
Language | English French Japanese |
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25.07.2019
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Abstract | This method for supplying a raw material comprises a solidification step for solidifying the surface of a silicon melt, a dropping step for dropping a solid raw material to a solidified portion formed in the solidification step, and a melting step for melting the solidified portion and the solid raw material. In the dropping step, the solid raw material is dropped with a transverse magnetic field of more than 0 tesla and not more than 0.05 tesla being applied to the silicon melt.
La présente invention concerne un procédé de fourniture d'une matière première comprenant les étapes suivantes : la solidification afin de solidifier la surface d'une masse fondue de silicium, la chute afin de faire tomber une matière première solide sur une partie solidifiée formée dans l'étape de solidification, et la fusion pour faire fondre la portion solidifiée et la matière première solide. Dans l'étape de chute, la matière première solide est déposée avec un champ magnétique transversal de plus de 0 tesla et de pas plus de 0,05 tesla appliqué à la masse fondue de silicium.
原料供給方法は、シリコン融液の表面を固化させる固化工程と、固化工程で形成された固化部分に、固形原料を投下する投下工程と、固化部分および固形原料を溶解する融解工程とを備え、投下工程は、0テスラ超0.05テスラ以下の横磁場をシリコン融液に印加した状態で、固形原料を投下する。 |
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AbstractList | This method for supplying a raw material comprises a solidification step for solidifying the surface of a silicon melt, a dropping step for dropping a solid raw material to a solidified portion formed in the solidification step, and a melting step for melting the solidified portion and the solid raw material. In the dropping step, the solid raw material is dropped with a transverse magnetic field of more than 0 tesla and not more than 0.05 tesla being applied to the silicon melt.
La présente invention concerne un procédé de fourniture d'une matière première comprenant les étapes suivantes : la solidification afin de solidifier la surface d'une masse fondue de silicium, la chute afin de faire tomber une matière première solide sur une partie solidifiée formée dans l'étape de solidification, et la fusion pour faire fondre la portion solidifiée et la matière première solide. Dans l'étape de chute, la matière première solide est déposée avec un champ magnétique transversal de plus de 0 tesla et de pas plus de 0,05 tesla appliqué à la masse fondue de silicium.
原料供給方法は、シリコン融液の表面を固化させる固化工程と、固化工程で形成された固化部分に、固形原料を投下する投下工程と、固化部分および固形原料を溶解する融解工程とを備え、投下工程は、0テスラ超0.05テスラ以下の横磁場をシリコン融液に印加した状態で、固形原料を投下する。 |
Author | KAWAKAMI Rui YOKOYAMA Ryusuke KANEHARA Takahiro |
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DocumentTitleAlternate | 原料供給方法およびシリコン単結晶の製造方法 PROCÉDÉ DE FOURNITURE DE MATIÈRE PREMIÈRE ET PROCÉDÉ DE PRODUCTION D'UN MONOCRISTAL DE SILICIUM |
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Snippet | This method for supplying a raw material comprises a solidification step for solidifying the surface of a silicon melt, a dropping step for dropping a solid... |
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SubjectTerms | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
Title | METHOD FOR SUPPLYING RAW MATERIAL AND METHOD FOR PRODUCING SILICON MONOCRYSTAL |
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