BENZENE GAS SENSOR USING MULTILAYERED SENSITIVE FILM STRUCTURE AND METHOD FOR MANUFACTURING SAME

The present invention relates to an oxide semiconductor type gas sensor and a method for manufacturing the same and, more specifically, to a gas sensor and a method for manufacturing the same, wherein the gas sensor can detect benzene, which is an indoor environment gas that adversely affects the hu...

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Main Authors LEE, Jong Heun, YOON, Ji-wook, JEONG, Seong-Yong, KIM, Tae-Hyung, AHN, Kong Hun, CHUNG, Gui Su
Format Patent
LanguageEnglish
French
Korean
Published 24.05.2018
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Abstract The present invention relates to an oxide semiconductor type gas sensor and a method for manufacturing the same and, more specifically, to a gas sensor and a method for manufacturing the same, wherein the gas sensor can detect benzene, which is an indoor environment gas that adversely affects the human body, with high sensitivity and high selectivity, by forming a layer of at least one catalyst, which is selected from cobalt oxide (Co3O4), chromium oxide (Cr2O3), manganese oxide (MnO2), and vanadium oxide (V2O5), on a gas sensitive layer made of palladium (Pd)-added tin oxide (SnO2) yolk shell-structured micropowder (Pd-loaded SnO2 yolk shell spheres). La présente invention concerne un capteur de gaz de type semi-conducteur à oxyde et son procédé de fabrication et, plus particulièrement, un capteur de gaz et son procédé de fabrication, le capteur de gaz pouvant détecter le benzène, qui est un gaz de l'environnement intérieur ayant une incidence négative sur le corps humain, avec une sensibilité et une sélectivité élevées, par la formation d'une couche d'au moins un catalyseur, choisi entre l'oxyde de cobalt (Co3O4), l'oxyde de chrome (Cr2O3), l'oxyde de manganèse (MnO2) et l'oxyde de vanadium (V2O5), sur une couche sensible au gaz constituée d'une micro-poudre à structure de type coquille de jaune d'œuf d'oxyde d'étain (SnO2) auquel du palladium (Pd) est ajouté (sphères de coquille de jaune d'œuf en SnO2 chargé en Pd). 본 발명은 산화물 반도체형 가스센서 및 그 제조방법에 관한 것으로, 더욱 상세하게는 팔라듐(Pd)이 첨가된 산화주석(SnO2) 난황구조 미분말(Pd-loaded SnO2 yolk shell spheres)로 이루어진 가스 감응층 상에 산화코발트(Co3O4), 산화크롬(Cr2O3), 산화망간(MnO2), 산화바나듐(V2O5) 중에서 선택되는 1종 이상의 촉매층을 형성함으로써 인체에 악영향을 주는 실내 환경 가스인 벤젠을 고감도, 고선택적으로 검지할 수 있는 가스 센서 및 그 제조방법에 관한 것이다.
AbstractList The present invention relates to an oxide semiconductor type gas sensor and a method for manufacturing the same and, more specifically, to a gas sensor and a method for manufacturing the same, wherein the gas sensor can detect benzene, which is an indoor environment gas that adversely affects the human body, with high sensitivity and high selectivity, by forming a layer of at least one catalyst, which is selected from cobalt oxide (Co3O4), chromium oxide (Cr2O3), manganese oxide (MnO2), and vanadium oxide (V2O5), on a gas sensitive layer made of palladium (Pd)-added tin oxide (SnO2) yolk shell-structured micropowder (Pd-loaded SnO2 yolk shell spheres). La présente invention concerne un capteur de gaz de type semi-conducteur à oxyde et son procédé de fabrication et, plus particulièrement, un capteur de gaz et son procédé de fabrication, le capteur de gaz pouvant détecter le benzène, qui est un gaz de l'environnement intérieur ayant une incidence négative sur le corps humain, avec une sensibilité et une sélectivité élevées, par la formation d'une couche d'au moins un catalyseur, choisi entre l'oxyde de cobalt (Co3O4), l'oxyde de chrome (Cr2O3), l'oxyde de manganèse (MnO2) et l'oxyde de vanadium (V2O5), sur une couche sensible au gaz constituée d'une micro-poudre à structure de type coquille de jaune d'œuf d'oxyde d'étain (SnO2) auquel du palladium (Pd) est ajouté (sphères de coquille de jaune d'œuf en SnO2 chargé en Pd). 본 발명은 산화물 반도체형 가스센서 및 그 제조방법에 관한 것으로, 더욱 상세하게는 팔라듐(Pd)이 첨가된 산화주석(SnO2) 난황구조 미분말(Pd-loaded SnO2 yolk shell spheres)로 이루어진 가스 감응층 상에 산화코발트(Co3O4), 산화크롬(Cr2O3), 산화망간(MnO2), 산화바나듐(V2O5) 중에서 선택되는 1종 이상의 촉매층을 형성함으로써 인체에 악영향을 주는 실내 환경 가스인 벤젠을 고감도, 고선택적으로 검지할 수 있는 가스 센서 및 그 제조방법에 관한 것이다.
Author KIM, Tae-Hyung
JEONG, Seong-Yong
AHN, Kong Hun
CHUNG, Gui Su
YOON, Ji-wook
LEE, Jong Heun
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DocumentTitleAlternate 다층 감응막 구조를 이용한 벤젠 가스 센서 및 그 제조방법
CAPTEUR DE GAZ BENZÈNE UTILISANT UNE STRUCTURE DE FILM SENSIBLE MULTICOUCHE ET SON PROCÉDÉ DE FABRICATION
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Snippet The present invention relates to an oxide semiconductor type gas sensor and a method for manufacturing the same and, more specifically, to a gas sensor and a...
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Title BENZENE GAS SENSOR USING MULTILAYERED SENSITIVE FILM STRUCTURE AND METHOD FOR MANUFACTURING SAME
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