HIGH-BRIGHTNESS LPP EUV LIGHT SOURCE
The invention provides a method and apparatus for a commercially viable EUV light source for EUV metrology and actinic inspection of EUV lithography masks. The invention is carried out using a laser target in the form of a continuous jet of liquid Lithium, circulated in a closed loop system by means...
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Format | Patent |
Language | English French |
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21.12.2017
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Abstract | The invention provides a method and apparatus for a commercially viable EUV light source for EUV metrology and actinic inspection of EUV lithography masks. The invention is carried out using a laser target in the form of a continuous jet of liquid Lithium, circulated in a closed loop system by means of a high temperature pump. The collector mirror is placed outside the vacuum chamber in an environment filled with an inert gas and EUV output to a collector mirror is provided through the spectral purity filter, configured as an EUV exit window for the vacuum chamber. In the vacuum chamber, the input window for the laser beam is coated with a screening optical element. Evaporative cleaning of the EUV spectral purity filter and the screening optical element is provided. The protective shield with a temperature higher than 180 °C may be adjusted around the target jet.
L'invention concerne un procédé et un appareil relatifs à une source de lumière EUV commercialement viable destinée à la métrologie EUV et à l'inspection actinique de masques de lithographie EUV. L'invention est réalisée en utilisant une cible laser sous la forme d'un jet continu de lithium liquide, mis en circulation dans un système en boucle fermée au moyen d'une pompe à haute température. Le miroir collecteur est placé à l'extérieur de la chambre à vide dans un environnement rempli d'un gaz inerte et des EUV délivrés à un miroir collecteur sont fournis à travers le filtre de pureté spectrale, configuré comme une fenêtre de sortie d'EUV pour la chambre à vide. Dans la chambre à vide, la fenêtre d'entrée du faisceau laser est revêtue d'un élément optique de criblage. Un nettoyage par évaporation du filtre de pureté spectrale d'EUV et l'élément optique de criblage est assuré. L'écran protecteur à une température supérieure à 180 °C peut être ajusté autour du jet de cible. |
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AbstractList | The invention provides a method and apparatus for a commercially viable EUV light source for EUV metrology and actinic inspection of EUV lithography masks. The invention is carried out using a laser target in the form of a continuous jet of liquid Lithium, circulated in a closed loop system by means of a high temperature pump. The collector mirror is placed outside the vacuum chamber in an environment filled with an inert gas and EUV output to a collector mirror is provided through the spectral purity filter, configured as an EUV exit window for the vacuum chamber. In the vacuum chamber, the input window for the laser beam is coated with a screening optical element. Evaporative cleaning of the EUV spectral purity filter and the screening optical element is provided. The protective shield with a temperature higher than 180 °C may be adjusted around the target jet.
L'invention concerne un procédé et un appareil relatifs à une source de lumière EUV commercialement viable destinée à la métrologie EUV et à l'inspection actinique de masques de lithographie EUV. L'invention est réalisée en utilisant une cible laser sous la forme d'un jet continu de lithium liquide, mis en circulation dans un système en boucle fermée au moyen d'une pompe à haute température. Le miroir collecteur est placé à l'extérieur de la chambre à vide dans un environnement rempli d'un gaz inerte et des EUV délivrés à un miroir collecteur sont fournis à travers le filtre de pureté spectrale, configuré comme une fenêtre de sortie d'EUV pour la chambre à vide. Dans la chambre à vide, la fenêtre d'entrée du faisceau laser est revêtue d'un élément optique de criblage. Un nettoyage par évaporation du filtre de pureté spectrale d'EUV et l'élément optique de criblage est assuré. L'écran protecteur à une température supérieure à 180 °C peut être ajusté autour du jet de cible. |
Author | MEDVEDEV, Vyacheslav Valerievich VINOKHODOV, Aleksandr Yurievich ELLWI, Samir IVANOV, Vladimir Vitalievich LASH, Aleksandr Andreevich SIDELNIKOV, Yury Viktorovich ANTSIFEROV, Pavel Stanislavovich KRYVOKORYTOV, Mikhail Sergeyevich GLUSHKOV, Denis KRIVTSUN, Vladimir Mikhailovich YAKUSHEV, Oleg Feliksovich SEROGLAZOV, Pavel KOSHELEV, Konstantin Nikolaevich |
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RelatedCompanies | ISTEQ, B.V EUV LABS, LTD |
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Snippet | The invention provides a method and apparatus for a commercially viable EUV light source for EUV metrology and actinic inspection of EUV lithography masks. The... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY GAMMA RAY OR X-RAY MICROSCOPES IRRADIATION DEVICES NUCLEAR ENGINEERING NUCLEAR PHYSICS PHYSICS PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR X-RAY TECHNIQUE |
Title | HIGH-BRIGHTNESS LPP EUV LIGHT SOURCE |
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