VAPOR DISPOSITION OF SILICON-CONTAINING FILMS USING PENTA-SUBSTITUTED DISILANES

• Main Authors: KO, Changhee, YANAGITA, Kazutaka, GIRARD, Jean-Marc, OSHCHEPKOV, Ivan, OKUBO, Shingo, NODA, Naoto, GATINEAU, Julien
• Format: Patent
• Language: English; French
• Published: 10.08.2017
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

Disclosed are methods of depositing silicon-containing films on substrates via vapor deposition processes using penta-substituted disilanes, such as pentahalodisilane or pentakis(dimethylamino)disilane. L'invention concerne des procédés de dépôt de films contenant du silicium sur des substrats par des procédés de dépôt en phase vapeur à l'aide de disilanes penta-substitués, tels qu'un pentahalodisilane ou un pentakis(diméthylamino)disilane.