CONFINED AND SCALABLE HELMET
An embodiment includes a system comprising: a first gate and a first contact that correspond to a transistor and are on a first fin; a second gate and a second contact that correspond to a transistor and are on a second fin; an interlayer dielectric (ILD) collinear with and between the first and sec...
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Main Authors | , , , , |
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Format | Patent |
Language | English French |
Published |
04.10.2018
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Abstract | An embodiment includes a system comprising: a first gate and a first contact that correspond to a transistor and are on a first fin; a second gate and a second contact that correspond to a transistor and are on a second fin; an interlayer dielectric (ILD) collinear with and between the first and second contacts; wherein (a) the first and second gates are collinear and the first and second contacts are collinear; (b) the ILD includes a recess that comprises a cap layer including at least one of an oxide and a nitride. Other embodiments are described herein.
Selon un mode de réalisation, l'invention concerne un système comprenant : une première grille et un premier contact qui correspondent à un transistor et sont situés sur une première ailette ; une seconde grille et un second contact qui correspondent à un transistor et se trouvent sur une seconde ailette ; et un diélectrique intercouche (ILD) colinéaire avec les premier et second contacts et situé entre ces derniers ; dans lequel (a) les première et seconde grilles sont colinéaires et les premier et second contacts sont colinéaires ; et (b) l'ILD comporte un évidement qui comprend une couche de recouvrement comprenant un oxyde et/ou un nitrure. D'autres modes de réalisation sont décrits dans la description. |
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AbstractList | An embodiment includes a system comprising: a first gate and a first contact that correspond to a transistor and are on a first fin; a second gate and a second contact that correspond to a transistor and are on a second fin; an interlayer dielectric (ILD) collinear with and between the first and second contacts; wherein (a) the first and second gates are collinear and the first and second contacts are collinear; (b) the ILD includes a recess that comprises a cap layer including at least one of an oxide and a nitride. Other embodiments are described herein.
Selon un mode de réalisation, l'invention concerne un système comprenant : une première grille et un premier contact qui correspondent à un transistor et sont situés sur une première ailette ; une seconde grille et un second contact qui correspondent à un transistor et se trouvent sur une seconde ailette ; et un diélectrique intercouche (ILD) colinéaire avec les premier et second contacts et situé entre ces derniers ; dans lequel (a) les première et seconde grilles sont colinéaires et les premier et second contacts sont colinéaires ; et (b) l'ILD comporte un évidement qui comprend une couche de recouvrement comprenant un oxyde et/ou un nitrure. D'autres modes de réalisation sont décrits dans la description. |
Author | SHARMA, Vyom BAMBERY, Rohan K LIAO, Szuya S THAREJA, Gaurav AUTH, Christopher P |
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Snippet | An embodiment includes a system comprising: a first gate and a first contact that correspond to a transistor and are on a first fin; a second gate and a second... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | CONFINED AND SCALABLE HELMET |
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