INTERMEDIATE LAYER FORMED BETWEEN SUBSTRATE AND DLC LAYER AND FILM FORMATION METHOD THEREFOR

• Main Authors: TASHIRO, Hiroki, HABUKA, Satoru, MATSUOKA, Hiroyuki, NOGAMI, Soichiro, SAKAKIBARA, Wataru
• Format: Patent
• Language: English; French; Japanese
• Published: 15.06.2017
• Subjects: BORING; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOUNDS THEREOF; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INORGANIC CHEMISTRY; LAYERED PRODUCTS; LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM; MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR; METALLURGY; NON-METALLIC ELEMENTS; PERFORMING OPERATIONS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TRANSPORTING; TURNING

In an intermediate layer formed between a substrate and a DLC layer, a Ti layer and a TiC layer formed on the surface of said Ti layer are provided, and the carbon content of the entire layer comprising the Ti layer and the TiC layer is 53 at% to 77 at%. Cette invention concerne une couche intermédiaire formée entre un substrat et une couche de carbone amorphe, ladite couche intermédiaire comprenant une couche de Ti et une couche de TiC formée sur la surface de ladite couche de Ti, la teneur en carbone de la couche tout entière comprenant la couche de Ti et la couche TiC allant de 53 à 77 % at. 基材とＤＬＣ層との間に形成される中間層において、Ｔｉ層と、前記Ｔｉ層の表面に形成されるＴｉＣ層とを設け、前記Ｔｉ層および前記ＴｉＣ層を含む層全体の炭素含有量を５３ａｔ％以上、７７ａｔ％以下とする。