SEMICONDUCTOR DEVICE

• Main Authors: KAWAKAMI TSUYOSHI, MASUOKA FUMIHITO, NISHII AKITO, NAKAMURA KATSUMI, CHEN ZE
• Format: Patent
• Language: English; French; Japanese
• Published: 16.07.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention is a semiconductor device that has achieved small size, high withstand voltage properties and high reliability. The present invention comprises: an electrical field alleviation layer (13) that surrounds an active region on the surface of a semiconductor substrate (11); an insul...