PLASMA ELECTRODE, PLASMA PROCESSING ELECTRODE, CVD ELECTRODE, PLASMA CVD DEVICE, AND METHOD FOR MANUFACTURING SUBSTRATE WITH THIN FILM
The present invention is a plasma electrode comprising: an electrode main body having a discharge surface on the outer circumference surface thereof, the interior of said electrode main body having a magnet disposed therein for forming a tunnel-shaped magnetic field on the discharge surface; and gro...
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Format | Patent |
Language | English French Japanese |
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28.05.2015
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Abstract | The present invention is a plasma electrode comprising: an electrode main body having a discharge surface on the outer circumference surface thereof, the interior of said electrode main body having a magnet disposed therein for forming a tunnel-shaped magnetic field on the discharge surface; and grounding members which face at least a portion of the discharge surface with a gap therebetween and face each other so as to sandwich the electrode main body therebetween. The discharge surface surrounds the outer circumference of the electrode main body, either with or without a gap interposed therebetween. According to the invention, a plasma electrode capable of achieving both improved plasma processing speed and stable discharge is provided.
La présente invention concerne une électrode de plasma comprenant : un corps principal d'électrode comportant une surface de décharge sur sa surface circonférentielle extérieure, l'intérieur dudit corps principal d'électrode comportant un aimant disposé en son sein pour former un champ magnétique en forme de tunnel sur la surface de décharge ; et des éléments de mise à la terre qui font face à au moins une partie de la surface de décharge, un espace les séparant et qui se font face de façon à prendre en sandwich, entre eux, le corps principal d'électrode. La surface de décharge entoure la circonférence extérieure du corps principal d'électrode, un espace étant, ou non, interposé entre elles. L'invention concerne une électrode de plasma permettant d'obtenir à la fois une vitesse de traitement au plasma améliorée et une décharge stable.
本発明は、外周面に放電面を有し、この放電面にトンネル状の磁場を形成するためのマグネットが内部に設けられた電極本体と、放電面の少なくとも一部と間隔を空けて対向し、電極本体を挟んで向かい合うアース部材とを有し、放電面が電極本体の外周を、間隔を置かずまたは間隔を置いて囲んでいるプラズマ電極である。 本発明により、プラズマ処理速度の向上と安定放電の両立が可能なプラズマ電極が提供される。 |
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AbstractList | The present invention is a plasma electrode comprising: an electrode main body having a discharge surface on the outer circumference surface thereof, the interior of said electrode main body having a magnet disposed therein for forming a tunnel-shaped magnetic field on the discharge surface; and grounding members which face at least a portion of the discharge surface with a gap therebetween and face each other so as to sandwich the electrode main body therebetween. The discharge surface surrounds the outer circumference of the electrode main body, either with or without a gap interposed therebetween. According to the invention, a plasma electrode capable of achieving both improved plasma processing speed and stable discharge is provided.
La présente invention concerne une électrode de plasma comprenant : un corps principal d'électrode comportant une surface de décharge sur sa surface circonférentielle extérieure, l'intérieur dudit corps principal d'électrode comportant un aimant disposé en son sein pour former un champ magnétique en forme de tunnel sur la surface de décharge ; et des éléments de mise à la terre qui font face à au moins une partie de la surface de décharge, un espace les séparant et qui se font face de façon à prendre en sandwich, entre eux, le corps principal d'électrode. La surface de décharge entoure la circonférence extérieure du corps principal d'électrode, un espace étant, ou non, interposé entre elles. L'invention concerne une électrode de plasma permettant d'obtenir à la fois une vitesse de traitement au plasma améliorée et une décharge stable.
本発明は、外周面に放電面を有し、この放電面にトンネル状の磁場を形成するためのマグネットが内部に設けられた電極本体と、放電面の少なくとも一部と間隔を空けて対向し、電極本体を挟んで向かい合うアース部材とを有し、放電面が電極本体の外周を、間隔を置かずまたは間隔を置いて囲んでいるプラズマ電極である。 本発明により、プラズマ処理速度の向上と安定放電の両立が可能なプラズマ電極が提供される。 |
Author | KAWASHITA, MAMORU EJIRI, HIROE |
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DocumentTitleAlternate | ÉLECTRODE DE PLASMA, ÉLECTRODE DE TRAITEMENT AU PLASMA, ÉLECTRODE DE CVD, DISPOSITIF DE CVD AU PLASMA ET PROCÉDÉ DE FABRICATION D'UN SUBSTRAT À FILM MINCE プラズマ電極、プラズマ処理電極、CVD電極、プラズマCVD装置及び薄膜付基材の製造方法 |
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Snippet | The present invention is a plasma electrode comprising: an electrode main body having a discharge surface on the outer circumference surface thereof, the... |
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SubjectTerms | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
Title | PLASMA ELECTRODE, PLASMA PROCESSING ELECTRODE, CVD ELECTRODE, PLASMA CVD DEVICE, AND METHOD FOR MANUFACTURING SUBSTRATE WITH THIN FILM |
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