ETCHANT COMPOSITION AND METHOD FOR FORMING METAL WIRE AND THIN FILM TRANSISTOR SUBSTRATE USING SAME

• Main Authors: KIM, GYU-PO, MOON, YOUNGMIN, SHIN, HYUNOL, CHO, SAM-YOUNG, CHOUNG, JONG-HYUN, KIM, IN-BAE, SEO, WON-GUK, LEE, KI-BEOM, PARK, HONGSICK, HAN, SEUNG-YEON
• Format: Patent
• Language: English; French; Korean
• Published: 02.04.2015
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE

An etchant composition according to an embodiment of the present invention comprises: based on the total weight of the etchant composition, 0.5 wt% to 20 wt% of persulfate, 0.01 wt% to 1 wt% of a fluorine compound, 1 wt% to about 10 wt% of an inorganic acid, 0.01 wt% to 2 wt% of an azole-based compound, 0.1 wt% to 5 wt% of a chlorine compound, 0.05 wt% to 3 wt% of copper salt, 0.01 wt% to 5 wt% of a sulfating agent or a salt of the sulfating agent, and water of which the weight is such that the total weight of the entire composition reaches 100 wt%. The etchant composition can be used to form a metal wire or manufacture a thin film transistor substrate by etching a metal film containing copper. La présente invention concerne, selon un mode de réalisation, une composition d'agent de gravure qui comprend : sur la base du poids total de la composition d'agent de gravure, entre 0,5 % en poids et 20 % en poids de persulfate, entre 0,01 % en poids et 1 % en poids d'un composé fluoré, entre 1 % en poids et environ 10 % en poids d'un acide inorganique, entre 0,01 % en poids et 2 % en poids d'un composé à base d'azole, entre 0,1 % en poids et 5 % en poids d'un composé chloré, entre 0,05 % en poids et 3 % en poids d'un sel de cuivre, entre 0,01 % en poids et 5 % en poids d'un agent de sulfatation ou d'un sel de l'agent de sulfatation, et de l'eau dont le poids est tel que le poids total de toute la composition atteint 100 % en poids. La composition d'agent de gravure peut être utilisée pour former un fil métallique ou fabriquer un substrat de transistor à couches minces par gravure d'un film métallique contenant du cuivre. 본 발명의 일 실시예에 따른 식각액 조성물은 식각액 조성물 총 중량에 대하여 0.5중량% 내지 20중량%의 과황산염, 0.01중량% 내지 1중량%의 불소 화합물, 1중량% 내지 약 10중량%의 무기산, 0.01중량% 내지 2중량%의 아졸계 화합물, 0.1중량% 내지 5중량%의 염소 화합물, 0.05중량% 내지 3중량%의 구리염, 0.01중량% 내지 5중량%의 항산화제 또는 상기 항산화제의 염, 및 전체 조성물의 총 중량이 100중량%가 되도록 하는 물을 포함한다. 식각액 조성물은 구리를 포함하는 금속막을 식각하여 금속 배선을 형성하거나 표시 장치용 박막 트랜지스터 기판 제조시에 사용될 수 있다.