SEMICONDUCTOR DEVICE, DRIVE DEVICE FOR SEMICONDUCTOR CIRCUIT, AND POWER CONVERSION DEVICE

This semiconductor device is provided with the following: a first-conductivity-type first semiconductor layer (7); a first-conductivity-type second semiconductor layer (1) that is adjacent to and has a lower impurity concentration than the first semiconductor layer; a second-conductivity-type third...

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Bibliographic Details
Main Authors HASHIMOTO TAKAYUKI, MORI MUTSUHIRO
Format Patent
LanguageEnglish
French
Japanese
Published 28.08.2014
Subjects
Online AccessGet full text

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