SEMICONDUCTOR DEVICE, DRIVE DEVICE FOR SEMICONDUCTOR CIRCUIT, AND POWER CONVERSION DEVICE
This semiconductor device is provided with the following: a first-conductivity-type first semiconductor layer (7); a first-conductivity-type second semiconductor layer (1) that is adjacent to and has a lower impurity concentration than the first semiconductor layer; a second-conductivity-type third...
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Main Authors | , |
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Format | Patent |
Language | English French Japanese |
Published |
28.08.2014
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Subjects | |
Online Access | Get full text |
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