SUBSTRATE PROCESSING DEVICE, SEMICONDUCTOR-DEVICE MANUFACTURING METHOD, AND RECORDING MEDIUM
[Problem] To heat a substrate, uniformly within the plane thereof, while keeping a thermal budget low. [Solution] This substrate processing device has the following: a processing chamber into/from which a substrate is conveyed; an EM supply unit that supplies electromagnetic radiation to the interio...
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Format | Patent |
Language | English French Japanese |
Published |
13.03.2014
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Abstract | [Problem] To heat a substrate, uniformly within the plane thereof, while keeping a thermal budget low. [Solution] This substrate processing device has the following: a processing chamber into/from which a substrate is conveyed; an EM supply unit that supplies electromagnetic radiation to the interior of the processing chamber; a substrate placement part, provided inside the processing chamber, on which the substrate is placed; an opening/closing part provided in the processing chamber; a sealing part provided in said opening/closing part; and a groove provided between the top surface of the substrate placement part and the sealing part.
La présente invention vise à chauffer un substrat, de manière uniforme dans le plan de celui-ci, tout en conservant un faible budget thermique. A cet effet, l'invention concerne un dispositif de traitement de substrat qui possède les éléments suivants : une chambre de traitement dans/à partir de laquelle un substrat est transporté; une unité d'alimentation électromagnétique qui fournit un rayonnement électromagnétique vers l'intérieur de la chambre de traitement; une partie de placement de substrat, disposée à l'intérieur de la chambre de traitement, sur laquelle le substrat est placé; une partie d'ouverture/fermeture disposée dans la chambre de traitement; une partie de scellage disposée dans ladite partie d'ouverture/fermeture; et une rainure disposée entre la surface supérieure de la partie de placement de substrat et la partie de scellage. |
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AbstractList | [Problem] To heat a substrate, uniformly within the plane thereof, while keeping a thermal budget low. [Solution] This substrate processing device has the following: a processing chamber into/from which a substrate is conveyed; an EM supply unit that supplies electromagnetic radiation to the interior of the processing chamber; a substrate placement part, provided inside the processing chamber, on which the substrate is placed; an opening/closing part provided in the processing chamber; a sealing part provided in said opening/closing part; and a groove provided between the top surface of the substrate placement part and the sealing part.
La présente invention vise à chauffer un substrat, de manière uniforme dans le plan de celui-ci, tout en conservant un faible budget thermique. A cet effet, l'invention concerne un dispositif de traitement de substrat qui possède les éléments suivants : une chambre de traitement dans/à partir de laquelle un substrat est transporté; une unité d'alimentation électromagnétique qui fournit un rayonnement électromagnétique vers l'intérieur de la chambre de traitement; une partie de placement de substrat, disposée à l'intérieur de la chambre de traitement, sur laquelle le substrat est placé; une partie d'ouverture/fermeture disposée dans la chambre de traitement; une partie de scellage disposée dans ladite partie d'ouverture/fermeture; et une rainure disposée entre la surface supérieure de la partie de placement de substrat et la partie de scellage. |
Author | UMEKAWA, ATSUSHI HAMANO, KATSUYOSHI OKUNO, MASAHISA JODA, TAKUYA ISHII, AKINORI |
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DocumentTitleAlternate | DISPOSITIF DE TRAITEMENT DE SUBSTRAT, PROCÉDÉ DE FABRICATION DE DISPOSITIF SEMI-CONDUCTEUR ET SUPPORT D'ENREGISTREMENT |
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RelatedCompanies | HITACHI KOKUSAI ELECTRIC INC |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | SUBSTRATE PROCESSING DEVICE, SEMICONDUCTOR-DEVICE MANUFACTURING METHOD, AND RECORDING MEDIUM |
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