METHOD OF FABRICATING EMITTER WRAP THROUGH SOLAR CELL USING ONE-STEP DOPING PROCESS

• Main Authors: CHO, JAE EOCK, JUNG, WOO WON, KIM, GANG IL, SEO, SE-YOUNG, HYUN, DEOC HWAN, LEE, HONG GU, LEE, YONG HWA
• Format: Patent
• Language: English; French
• Published: 07.03.2013
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

Provided is a method of fabricating a selective EWT solar cell, including: a) forming via holes penetrating through opposing first and second surfaces of a p-type semiconductor substrate using laser; b) forming an anti-reflective film on the first surface of the semiconductor substrate, and forming a passivation film on the second surface of the semiconductor substrate; c) partially etching the passivation film so as to expose a part of the second surface on which an opening part of each of the via holes is formed; and d) heat-treating the semiconductor substrate under the presence of n-type impurity to dope the n-type impurity on the semiconductor substrate. On décrit un procédé de fabrication d'une cellule photovoltaïque EWT à émetteur sélectif, qui consiste à: a) former par laser des trous d'interconnexion traversant une première et une seconde surface opposées d'un substrat semi-conducteur de type p; b) former une couche anti-reflets sur la première surface du substrat semi-conducteur, et former une couche de passivation sur la seconde surface du substrat semi-conducteur; c) graver partiellement la couche de passivation de manière à exposer une partie de la seconde surface sur laquelle est formée une partie ouverture de chaque trou d'interconnexion; et d) thermotraiter le substrat semi-conducteur en présence d'impuretés de type n afin de doper ces impuretés sur le substrat semi-conducteur.