FIELD EFFECT TRANSISTOR
Disclosed is a field effect transistor which comprises a nitride semiconductor laminate (102) that is formed on top of a substrate (101), a source electrode (105), a drain electrode (106), a gate electrode (107), an insulating film (110) that is formed on top of the nitride semiconductor laminate (1...
Saved in:
| Main Authors | , , , , |
|---|---|
| Format | Patent |
| Language | English French Japanese |
| Published |
01.12.2011
|
| Subjects | |
| Online Access | Get full text |
Cover
Loading…
| Abstract | Disclosed is a field effect transistor which comprises a nitride semiconductor laminate (102) that is formed on top of a substrate (101), a source electrode (105), a drain electrode (106), a gate electrode (107), an insulating film (110) that is formed on top of the nitride semiconductor laminate (102), and a field plate (115) that is formed on top of and in contact with the insulating film (110) with an end portion being located between the gate electrode (107) and the drain electrode (106). The insulating film (110) comprises a first film (111) and a second film (112) that has a lower withstand voltage than the first film (111), and has a thin film portion (110a) that is formed between the gate electrode (107) and the drain electrode (106). The field plate (115) covers the thin film portion (110a) and is connected to the source electrode in an opening portion.
L'invention concerne un transistor à effet de champ comportant un stratifié (102) de semiconducteur de type nitrure formé par-dessus un substrat (101), une électrode (105) de source, une électrode (106) de drain, une électrode (107) de grille, un film isolant (110) formé par-dessus le stratifié (102) de semiconducteur de type nitrure, et une plaque (115) de champ formée par-dessus et en contact avec le film isolant (110), et dont une partie d'extrémité est située entre l'électrode (107) de grille et l'électrode (106) de drain. Le film isolant (110) comporte un premier film (111) et un deuxième film (112) caractérisé par une tension de tenue inférieure à celle du premier film (111), et comprend une partie (110a) de film mince formée entre l'électrode (107) de grille et l'électrode (106) de drain. La plaque (115) de champ recouvre la partie (110a) de film mince et est reliée à l'électrode de source au sein d'une partie d'ouverture. |
|---|---|
| AbstractList | Disclosed is a field effect transistor which comprises a nitride semiconductor laminate (102) that is formed on top of a substrate (101), a source electrode (105), a drain electrode (106), a gate electrode (107), an insulating film (110) that is formed on top of the nitride semiconductor laminate (102), and a field plate (115) that is formed on top of and in contact with the insulating film (110) with an end portion being located between the gate electrode (107) and the drain electrode (106). The insulating film (110) comprises a first film (111) and a second film (112) that has a lower withstand voltage than the first film (111), and has a thin film portion (110a) that is formed between the gate electrode (107) and the drain electrode (106). The field plate (115) covers the thin film portion (110a) and is connected to the source electrode in an opening portion.
L'invention concerne un transistor à effet de champ comportant un stratifié (102) de semiconducteur de type nitrure formé par-dessus un substrat (101), une électrode (105) de source, une électrode (106) de drain, une électrode (107) de grille, un film isolant (110) formé par-dessus le stratifié (102) de semiconducteur de type nitrure, et une plaque (115) de champ formée par-dessus et en contact avec le film isolant (110), et dont une partie d'extrémité est située entre l'électrode (107) de grille et l'électrode (106) de drain. Le film isolant (110) comporte un premier film (111) et un deuxième film (112) caractérisé par une tension de tenue inférieure à celle du premier film (111), et comprend une partie (110a) de film mince formée entre l'électrode (107) de grille et l'électrode (106) de drain. La plaque (115) de champ recouvre la partie (110a) de film mince et est reliée à l'électrode de source au sein d'une partie d'ouverture. |
| Author | ANDA, YOSHIHARU NAKAZAWA, SATOSHI UEDA, TETSUZO KAJITANI, RYO TSURUMI, NAOHIRO |
| Author_xml | – fullname: NAKAZAWA, SATOSHI – fullname: TSURUMI, NAOHIRO – fullname: UEDA, TETSUZO – fullname: ANDA, YOSHIHARU – fullname: KAJITANI, RYO |
| BookMark | eNrjYmDJy89L5WQQd_N09XFRcHVzc3UOUQgJcvQL9gwO8Q_iYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXx4f5GBoaGhiYWJibGjobGxKkCACAHIg4 |
| ContentType | Patent |
| DBID | EVB |
| DatabaseName | esp@cenet |
| DatabaseTitleList | |
| Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Medicine Chemistry Sciences |
| DocumentTitleAlternate | TRANSISTOR À EFFET DE CHAMP |
| ExternalDocumentID | WO2011148443A1 |
| GroupedDBID | EVB |
| ID | FETCH-epo_espacenet_WO2011148443A13 |
| IEDL.DBID | EVB |
| IngestDate | Fri Jul 19 15:30:20 EDT 2024 |
| IsOpenAccess | true |
| IsPeerReviewed | false |
| IsScholarly | false |
| Language | English French Japanese |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-epo_espacenet_WO2011148443A13 |
| Notes | Application Number: WO2010JP06935 |
| OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20111201&DB=EPODOC&CC=WO&NR=2011148443A1 |
| ParticipantIDs | epo_espacenet_WO2011148443A1 |
| PublicationCentury | 2000 |
| PublicationDate | 20111201 |
| PublicationDateYYYYMMDD | 2011-12-01 |
| PublicationDate_xml | – month: 12 year: 2011 text: 20111201 day: 01 |
| PublicationDecade | 2010 |
| PublicationYear | 2011 |
| RelatedCompanies | ANDA, YOSHIHARU NAKAZAWA, SATOSHI UEDA, TETSUZO KAJITANI, RYO TSURUMI, NAOHIRO PANASONIC CORPORATION |
| RelatedCompanies_xml | – name: UEDA, TETSUZO – name: ANDA, YOSHIHARU – name: NAKAZAWA, SATOSHI – name: PANASONIC CORPORATION – name: KAJITANI, RYO – name: TSURUMI, NAOHIRO |
| Score | 2.9382176 |
| Snippet | Disclosed is a field effect transistor which comprises a nitride semiconductor laminate (102) that is formed on top of a substrate (101), a source electrode... |
| SourceID | epo |
| SourceType | Open Access Repository |
| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | FIELD EFFECT TRANSISTOR |
| URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20111201&DB=EPODOC&locale=&CC=WO&NR=2011148443A1 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQSTZKSjQySzbWNUtMS9UF1vgpupbJZsCOq0lKWpJhommSeSJo77Cvn5lHqIlXhGkEE0MObC8M-JzQcvDhiMAclQzM7yXg8roAMYjlAl5bWayflAkUyrd3C7F1UUuBDfcZAgk1Fydb1wB_F39nNWdnYL9NzS8IImdiYWJi7AjsK7GCGtKgk_Zdw5xA-1IKkCsVN0EGtgCgeXklQgxMWYnCDJzOsLvXhBk4fKFT3kAmNPcVizCIu3m6-rgoAJuWrs4hCiFBjn7BnsEh_kGiDMpuriHOHrpAG-LhHooP90d2jrEYAwuwq58qwaCQkmyYnGxpnmaSmmhuAtrdaGSclmpkbJaanGqaaGJpIskgg88kKfzS0gxc4BFR8GIMGQaWkqLSVFlglVqSJAcOCQCN0na_ |
| link.rule.ids | 230,309,786,891,25594,76906 |
| linkProvider | European Patent Office |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQSTZKSjQySzbWNUtMS9UF1vgpupbJZsCOq0lKWpJhommSeSJo77Cvn5lHqIlXhGkEE0MObC8M-JzQcvDhiMAclQzM7yXg8roAMYjlAl5bWayflAkUyrd3C7F1UUuBDfcZAgk1Fydb1wB_F39nNWdnYL9NzS8IImdiYWJi7AjsK7Gag87nBTWewpxA-1IKkCsVN0EGtgCgeXklQgxMWYnCDJzOsLvXhBk4fKFT3kAmNPcVizCIu3m6-rgoAJuWrs4hCiFBjn7BnsEh_kGiDMpuriHOHrpAG-LhHooP90d2jrEYAwuwq58qwaCQkmyYnGxpnmaSmmhuAtrdaGSclmpkbJaanGqaaGJpIskgg88kKfzS8gycHiG-PvE-nn7e0gxc4NFR8MIMGQaWkqLSVFlg9VqSJAcOFQBDs3ms |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=FIELD+EFFECT+TRANSISTOR&rft.inventor=NAKAZAWA%2C+SATOSHI&rft.inventor=TSURUMI%2C+NAOHIRO&rft.inventor=UEDA%2C+TETSUZO&rft.inventor=ANDA%2C+YOSHIHARU&rft.inventor=KAJITANI%2C+RYO&rft.date=2011-12-01&rft.externalDBID=A1&rft.externalDocID=WO2011148443A1 |