DEVICE FOR PRODUCING SINGLE CRYSTAL OF SILICON CARBIDE
A device (1) for producing a single crystal of silicon carbide which comprises a reaction vessel (10) constituted of graphite and configured so that the upper opening (11b) of a cylindrical reaction vessel main body (11) has been blocked with a lid (12), and a heating member comprising a single heat...
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Format | Patent |
Language | English French Japanese |
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07.10.2010
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Abstract | A device (1) for producing a single crystal of silicon carbide which comprises a reaction vessel (10) constituted of graphite and configured so that the upper opening (11b) of a cylindrical reaction vessel main body (11) has been blocked with a lid (12), and a heating member comprising a single heating coil continuously wound around the outer periphery of the reaction vessel (10) constituted of graphite and in which a sublimable starting material (50) is held on the bottom (11a) and a seed crystal (60) is attached to the inner surface (12a) of the reaction vessel. The lower coil (31), which has wound around the bottom (11a) of the reaction vessel main body (11), and the upper coil (32), which has wound around the lid (12), have coil pitches (P1 and P3) that have been set so as to be smaller than the coil pitch (P2) of the central coil (33), which has wound around the height-direction center of the reaction vessel main body (11).
La présente invention se rapporte à un dispositif (1) permettant de fabriquer un monocristal de carbure de silicium qui comprend un récipient de réaction (10) constitué de graphite et configuré de telle sorte que l'ouverture supérieure (11b) d'un corps principal de récipient de réaction cylindrique (11) a été fermée avec un couvercle (12), et un élément chauffant comprenant une seule bobine chauffante enroulée en continu autour de la périphérie externe du récipient de réaction (10) constitué de graphite et dans lequel un matériau de départ sublimable (50) est maintenu sur la partie inférieure (11a) et un germe cristallin (60) est fixé à la surface interne (12a) du vaisseau de réaction. La bobine inférieure (31), qui est enroulée autour de la partie inférieure (11a) du corps principal de récipient de réaction (11), et la bobine supérieure (32), qui est enroulée autour du couvercle (12), ont des pas de bobine (P1 et P3) qui ont été déterminés de sorte à être plus petits que le pas de bobine (P2) de la bobine centrale (33) qui est enroulée autour du centre dans le sens de la hauteur du corps principal de récipient de réaction (11). |
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AbstractList | A device (1) for producing a single crystal of silicon carbide which comprises a reaction vessel (10) constituted of graphite and configured so that the upper opening (11b) of a cylindrical reaction vessel main body (11) has been blocked with a lid (12), and a heating member comprising a single heating coil continuously wound around the outer periphery of the reaction vessel (10) constituted of graphite and in which a sublimable starting material (50) is held on the bottom (11a) and a seed crystal (60) is attached to the inner surface (12a) of the reaction vessel. The lower coil (31), which has wound around the bottom (11a) of the reaction vessel main body (11), and the upper coil (32), which has wound around the lid (12), have coil pitches (P1 and P3) that have been set so as to be smaller than the coil pitch (P2) of the central coil (33), which has wound around the height-direction center of the reaction vessel main body (11).
La présente invention se rapporte à un dispositif (1) permettant de fabriquer un monocristal de carbure de silicium qui comprend un récipient de réaction (10) constitué de graphite et configuré de telle sorte que l'ouverture supérieure (11b) d'un corps principal de récipient de réaction cylindrique (11) a été fermée avec un couvercle (12), et un élément chauffant comprenant une seule bobine chauffante enroulée en continu autour de la périphérie externe du récipient de réaction (10) constitué de graphite et dans lequel un matériau de départ sublimable (50) est maintenu sur la partie inférieure (11a) et un germe cristallin (60) est fixé à la surface interne (12a) du vaisseau de réaction. La bobine inférieure (31), qui est enroulée autour de la partie inférieure (11a) du corps principal de récipient de réaction (11), et la bobine supérieure (32), qui est enroulée autour du couvercle (12), ont des pas de bobine (P1 et P3) qui ont été déterminés de sorte à être plus petits que le pas de bobine (P2) de la bobine centrale (33) qui est enroulée autour du centre dans le sens de la hauteur du corps principal de récipient de réaction (11). |
Author | KONDO, DAISUKE SEKI, WATARU |
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DocumentTitleAlternate | DISPOSITIF DE FABRICATION D'UN MONOCRISTAL DE CARBURE DE SILICIUM |
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RelatedCompanies | KONDO, DAISUKE BRIDGESTONE CORPORATION SEKI, WATARU |
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Snippet | A device (1) for producing a single crystal of silicon carbide which comprises a reaction vessel (10) constituted of graphite and configured so that the upper... |
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SubjectTerms | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
Title | DEVICE FOR PRODUCING SINGLE CRYSTAL OF SILICON CARBIDE |
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