MAGNETORESISTIVE ELEMENT, METHOD FOR MANUFACTURING SAME, AND STORAGE MEDIUM USED IN THE MANUFACTURING METHOD

• Main Authors: KURIBAYASHI, MASAKI, DJAYAPRAWIRA, DAVID DJULIANTO
• Format: Patent
• Language: English; French; Japanese
• Published: 04.03.2010
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INDUCTANCES; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MAGNETS; METALLURGY; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TRANSFORMERS

A magnetoresistive element having a higher MR ratio than conventional magnetoresistive elements. The magnetoresistive element comprises a crystalline first ferromagnetic layer, a tunnel barrier layer and a crystalline second ferromagnetic layer.  The three layers have a polycrystalline structure composed of an aggregate of columnar crystals, and the tunnel barrier layer is composed of a metal oxide layer which contains B atoms and Mg atoms, with the B atom content being not more than 30 atomic%. L'invention porte sur un élément magnétorésistif ayant un rapport MR supérieur aux éléments magnétorésistifs classiques. L'élément magnétorésistif comprend une première couche ferromagnétique cristalline, une couche barrière à effet tunnel et une seconde couche ferromagnétique cristalline. Les trois couches ont une structure polycristalline composée d'un agrégat de cristaux columnaires, et la couche barrière à effet tunnel est composée d'une couche d'oxyde de métal qui contient des atomes B et des atomes Mg, avec la teneur en atomes B étant non supérieure à 30 % atomique.