CMOS SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

• Main Authors: EIMORI, TAKAHISA, MISE, NOBUYUKI
• Format: Patent
• Language: English; French; Japanese
• Published: 11.06.2009
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Disclosed is a CMOS semiconductor device which includes an n-type MOSFET and a p-type MOSFET. The gate electrode of the n-type MOSFET is provided with a first insulating layer composed of a high-k material, and a first metal layer which is arranged on the first insulating layer and is composed of a...