ANTIMONY AND GERMANIUM COMPLEXES USEFUL FOR CVD/ALD OF METAL THIN FILMS

• Main Authors: XU, CHONGYING, STAUF, GREGORY, T, PETRUSKA, MELISSA, A, BAUM, THOMAS, H, STENDER, MATTHIAS, CHEN, PHILIP, S., H, HENDRIX, BRYAN, C, CHEN, TIANNIU, ROEDER, JEFFREY, F, HUNKS, WILLIAM
• Format: Patent
• Language: English; French
• Published: 18.03.2010
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films. L'invention concerne des précurseurs d'antimoine, de germanium et de tellure utiles pour les CVD/ALD des films minces métalliques correspondants, ainsi que des compositions contenant des précurseurs de ce type, des procédés de fabrication de précurseurs de ce type et des films et des produits pour dispositifs microélectroniques fabriqués au moyen de précurseurs de ce type, ainsi que des procédés de fabrication correspondants. Les précurseurs de l'invention sont utilisés pour former des films de germanium-antimoine-tellure (GST) et des produits pour dispositifs microélectroniques, tels que les dispositifs de mémoire à changement de phase, qui contiennent des films de ce type.