POSITIVE RESIST COMPOSITION FOR FORMING THICK RESIST FILM, OBJECT COATED WITH THICK RESIST, AND METHOD OF FORMING RESIST PATTERN
A positive resist composition which is for forming a thick resist film having a thickness of 1-15 µm. The positive resist composition comprises: a resin ingredient (A) comprising a polymer (A1) having a mass-average molecular weight of 20,000-50,000 and having a structural unit (a1) derived from hyd...
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| Main Authors | , , , |
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| Format | Patent |
| Language | English French Japanese |
| Published |
09.08.2007
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| Subjects | |
| Online Access | Get full text |
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| Abstract | A positive resist composition which is for forming a thick resist film having a thickness of 1-15 µm. The positive resist composition comprises: a resin ingredient (A) comprising a polymer (A1) having a mass-average molecular weight of 20,000-50,000 and having a structural unit (a1) derived from hydroxystyrene and a structural unit (a2) containing an acid-dissociable dissolution-inhibitive group and derived from an acrylic ester; an acid generator ingredient (B) which comprises an onium salt type acid generator having an anionic part represented by the general formula (I): R4"SO3
L'invention concerne une composition de resist positif destinée à la formation d'un film de resist épais ayant une épaisseur comprise entre 1 et 15 µm. La composition de resist positif comprend : un ingrédient de résine (A) comprenant un polymère (A1) ayant une masse moléculaire moyenne en masse comprise entre 20 000 et 50 000 et ayant une unité structurale (a1) dérivée d'hydroxystyrène et une unité structurale (a2) contenant un groupement inhibiteur de dissolution dissociable en milieu acide et dérivée d'un ester acrylique ; un ingrédient générateur d'acide (B) comprenant un générateur d'acide de type sel d'onium ayant une partie anionique représentée par la formule générale (I) : R4'SO3 |
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| AbstractList | A positive resist composition which is for forming a thick resist film having a thickness of 1-15 µm. The positive resist composition comprises: a resin ingredient (A) comprising a polymer (A1) having a mass-average molecular weight of 20,000-50,000 and having a structural unit (a1) derived from hydroxystyrene and a structural unit (a2) containing an acid-dissociable dissolution-inhibitive group and derived from an acrylic ester; an acid generator ingredient (B) which comprises an onium salt type acid generator having an anionic part represented by the general formula (I): R4"SO3
L'invention concerne une composition de resist positif destinée à la formation d'un film de resist épais ayant une épaisseur comprise entre 1 et 15 µm. La composition de resist positif comprend : un ingrédient de résine (A) comprenant un polymère (A1) ayant une masse moléculaire moyenne en masse comprise entre 20 000 et 50 000 et ayant une unité structurale (a1) dérivée d'hydroxystyrène et une unité structurale (a2) contenant un groupement inhibiteur de dissolution dissociable en milieu acide et dérivée d'un ester acrylique ; un ingrédient générateur d'acide (B) comprenant un générateur d'acide de type sel d'onium ayant une partie anionique représentée par la formule générale (I) : R4'SO3 |
| Author | YOSHIZAWA, SACHIKO SHIMBORI, HIROSHI YAMAGUCHI, TOSHIHIRO MASUJIMA, MASAHIRO |
| Author_xml | – fullname: SHIMBORI, HIROSHI – fullname: YAMAGUCHI, TOSHIHIRO – fullname: MASUJIMA, MASAHIRO – fullname: YOSHIZAWA, SACHIKO |
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| DocumentTitleAlternate | COMPOSITION DE RESIST POSITIF POUR LA FORMATION D'UN FILM EPAIS DE RESIST, OBJET ENDUIT D'UN RESIST EPAIS ET PROCEDE DE FORMATION D'UN MOTIF DE RESIST |
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| Notes | Application Number: WO2007JP51589 |
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| RelatedCompanies | YOSHIZAWA, SACHIKO SHIMBORI, HIROSHI YAMAGUCHI, TOSHIHIRO TOKYO OHKA KOGYO CO., LTD MASUJIMA, MASAHIRO |
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| Snippet | A positive resist composition which is for forming a thick resist film having a thickness of 1-15 µm. The positive resist composition comprises: a resin... |
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| SubjectTerms | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| Title | POSITIVE RESIST COMPOSITION FOR FORMING THICK RESIST FILM, OBJECT COATED WITH THICK RESIST, AND METHOD OF FORMING RESIST PATTERN |
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