NON-VOLATILE MEMORY
A non-volatile memory (50) is disclosed. A second electrode (56) is provided. A first electrode (51) is also provided. A recording layer having a plurality of phase change cells (54) variable in resistance is provided between the first electrode (51) and the second electrode (56). A non-uniform tunn...
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Format | Patent |
Language | English French |
Published |
08.06.2006
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Abstract | A non-volatile memory (50) is disclosed. A second electrode (56) is provided. A first electrode (51) is also provided. A recording layer having a plurality of phase change cells (54) variable in resistance is provided between the first electrode (51) and the second electrode (56). A non-uniform tunnel barrier (540) is provided adjacent each of the recording layer and the first electrode. In use, the first electrode is in electrical communication with the non-uniform tunnel barrier, the first electrode for electrically communicating with the second electrode via the non-uniform tunnel barrier.
L'invention porte sur une mémoire non volatile (50), sur une seconde électrode (56) et sur une première électrode (51). Une couche d'enregistrement possédant une pluralité de cellules à variation de phase (54) et à résistance variable est formée entre la première électrode (51) et la seconde électrode (56). Une barrière tunnel non uniforme (540) est formée à côté de chaque couche d'enregistrement et de la première électrode. En utilisation, la première électrode est en communication électrique avec la barrière tunnel non uniforme, la première électrode étant en communication électrique avec la seconde électrode par l'intermédiaire de la barrière tunnel non uniforme. |
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AbstractList | A non-volatile memory (50) is disclosed. A second electrode (56) is provided. A first electrode (51) is also provided. A recording layer having a plurality of phase change cells (54) variable in resistance is provided between the first electrode (51) and the second electrode (56). A non-uniform tunnel barrier (540) is provided adjacent each of the recording layer and the first electrode. In use, the first electrode is in electrical communication with the non-uniform tunnel barrier, the first electrode for electrically communicating with the second electrode via the non-uniform tunnel barrier.
L'invention porte sur une mémoire non volatile (50), sur une seconde électrode (56) et sur une première électrode (51). Une couche d'enregistrement possédant une pluralité de cellules à variation de phase (54) et à résistance variable est formée entre la première électrode (51) et la seconde électrode (56). Une barrière tunnel non uniforme (540) est formée à côté de chaque couche d'enregistrement et de la première électrode. En utilisation, la première électrode est en communication électrique avec la barrière tunnel non uniforme, la première électrode étant en communication électrique avec la seconde électrode par l'intermédiaire de la barrière tunnel non uniforme. |
Author | ATTENBOROUGH, KAREN BOEVE, HANS |
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Snippet | A non-volatile memory (50) is disclosed. A second electrode (56) is provided. A first electrode (51) is also provided. A recording layer having a plurality of... |
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Title | NON-VOLATILE MEMORY |
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