Abstract An arrangement in a plasma processing system for selectively providing an RF grounding path between an electrode and ground. The arrangement includes an RF conduction path structure and an annular structure. The annular structure and the RF conduction path structure having two relative positions relative to one another. A first relative position of the two relative positions is characterized by the annular structure electrically coupling with the RF conduction path structure to provide a ground to the RF conduction path structure. A second relative position of the two relative positions is characterized by the annular structure being electrically uncoupled from the RF conduction path. L'invention concerne un agencement dans un système de traitement au plasma permettant de fournir de manière sélective un trajet de mise à la terre RF entre une électrode et la terre. Cet agencement comprend une structure de trajet de conduction RF et une structure annulaire. La structure annulaire et la structure de trajet de conduction RF présentent deux positions relatives. La première position relative se caractérise en ce que la structure annulaire est couplée électriquement à la structure de trajet de conduction RF afin de fournir une mise à la terre à la structure de trajet de conduction RF. La deuxième position relative se caractérise en ce que la structure annulaire n'est pas couplée électriquement au trajet de conduction RF.
AbstractList An arrangement in a plasma processing system for selectively providing an RF grounding path between an electrode and ground. The arrangement includes an RF conduction path structure and an annular structure. The annular structure and the RF conduction path structure having two relative positions relative to one another. A first relative position of the two relative positions is characterized by the annular structure electrically coupling with the RF conduction path structure to provide a ground to the RF conduction path structure. A second relative position of the two relative positions is characterized by the annular structure being electrically uncoupled from the RF conduction path. L'invention concerne un agencement dans un système de traitement au plasma permettant de fournir de manière sélective un trajet de mise à la terre RF entre une électrode et la terre. Cet agencement comprend une structure de trajet de conduction RF et une structure annulaire. La structure annulaire et la structure de trajet de conduction RF présentent deux positions relatives. La première position relative se caractérise en ce que la structure annulaire est couplée électriquement à la structure de trajet de conduction RF afin de fournir une mise à la terre à la structure de trajet de conduction RF. La deuxième position relative se caractérise en ce que la structure annulaire n'est pas couplée électriquement au trajet de conduction RF.
Author KOZAKEVICH, FELIX
LENZ, ERIC
DHINDSA, RAJ
MARTIN, RUSSELL
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DocumentTitleAlternate COMMUTATEUR DE TERRE RF POUR SYSTEME DE TRAITEMENT AU PLASMA
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LENZ, ERIC
LAM RESEARCH CORPORATION
DHINDSA, RAJ
MARTIN, RUSSELL
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Snippet An arrangement in a plasma processing system for selectively providing an RF grounding path between an electrode and ground. The arrangement includes an RF...
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SubjectTerms BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DECORATIVE ARTS
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
MOSAICS
MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
PAPERHANGING
PERFORMING OPERATIONS
PRODUCING DECORATIVE EFFECTS
SEMICONDUCTOR DEVICES
TARSIA WORK
TRANSPORTING
Title RF GROUND SWITCH FOR PLASMA PROCESSING SYSTEM
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