RF GROUND SWITCH FOR PLASMA PROCESSING SYSTEM
An arrangement in a plasma processing system for selectively providing an RF grounding path between an electrode and ground. The arrangement includes an RF conduction path structure and an annular structure. The annular structure and the RF conduction path structure having two relative positions rel...
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Format | Patent |
Language | English French |
Published |
21.02.2008
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Abstract | An arrangement in a plasma processing system for selectively providing an RF grounding path between an electrode and ground. The arrangement includes an RF conduction path structure and an annular structure. The annular structure and the RF conduction path structure having two relative positions relative to one another. A first relative position of the two relative positions is characterized by the annular structure electrically coupling with the RF conduction path structure to provide a ground to the RF conduction path structure. A second relative position of the two relative positions is characterized by the annular structure being electrically uncoupled from the RF conduction path.
L'invention concerne un agencement dans un système de traitement au plasma permettant de fournir de manière sélective un trajet de mise à la terre RF entre une électrode et la terre. Cet agencement comprend une structure de trajet de conduction RF et une structure annulaire. La structure annulaire et la structure de trajet de conduction RF présentent deux positions relatives. La première position relative se caractérise en ce que la structure annulaire est couplée électriquement à la structure de trajet de conduction RF afin de fournir une mise à la terre à la structure de trajet de conduction RF. La deuxième position relative se caractérise en ce que la structure annulaire n'est pas couplée électriquement au trajet de conduction RF. |
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AbstractList | An arrangement in a plasma processing system for selectively providing an RF grounding path between an electrode and ground. The arrangement includes an RF conduction path structure and an annular structure. The annular structure and the RF conduction path structure having two relative positions relative to one another. A first relative position of the two relative positions is characterized by the annular structure electrically coupling with the RF conduction path structure to provide a ground to the RF conduction path structure. A second relative position of the two relative positions is characterized by the annular structure being electrically uncoupled from the RF conduction path.
L'invention concerne un agencement dans un système de traitement au plasma permettant de fournir de manière sélective un trajet de mise à la terre RF entre une électrode et la terre. Cet agencement comprend une structure de trajet de conduction RF et une structure annulaire. La structure annulaire et la structure de trajet de conduction RF présentent deux positions relatives. La première position relative se caractérise en ce que la structure annulaire est couplée électriquement à la structure de trajet de conduction RF afin de fournir une mise à la terre à la structure de trajet de conduction RF. La deuxième position relative se caractérise en ce que la structure annulaire n'est pas couplée électriquement au trajet de conduction RF. |
Author | KOZAKEVICH, FELIX LENZ, ERIC DHINDSA, RAJ MARTIN, RUSSELL |
Author_xml | – fullname: DHINDSA, RAJ – fullname: LENZ, ERIC – fullname: KOZAKEVICH, FELIX – fullname: MARTIN, RUSSELL |
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DocumentTitleAlternate | COMMUTATEUR DE TERRE RF POUR SYSTEME DE TRAITEMENT AU PLASMA |
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RelatedCompanies | KOZAKEVICH, FELIX LENZ, ERIC LAM RESEARCH CORPORATION DHINDSA, RAJ MARTIN, RUSSELL |
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Snippet | An arrangement in a plasma processing system for selectively providing an RF grounding path between an electrode and ground. The arrangement includes an RF... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DECORATIVE ARTS DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MOSAICS MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PAPERHANGING PERFORMING OPERATIONS PRODUCING DECORATIVE EFFECTS SEMICONDUCTOR DEVICES TARSIA WORK TRANSPORTING |
Title | RF GROUND SWITCH FOR PLASMA PROCESSING SYSTEM |
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