METHOD FOR FORMING A SEMICONDUCTOR DEVICE AND STRUCTURE THEREOF

• Main Authors: LII, YEONG-JYH, T, SMITH, BRADLEY, P, YU, KATHLEEN, C, SOLOMENTSEV, YURI, E, SPARKS, TERRY, G, STROZEWSKI, KIRK, J, GOLDBERG, CINDY, K, FILIPIAK, STANLEY, M, FLAKE, JOHN, C
• Format: Patent
• Language: English; French
• Published: 22.07.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Dummy features (64, 65, 48a, 48b) are formed within an interlevel dielectric layer (36). In one embodiment, a non-gap filling dielectric layer (72) is formed over the dummy features (64, 65, 48a, 48b) to form voids (74) between the dummy features (64, 65, 48a, 48b) or a dummy feature (48a) and a cur...