OPTICAL SENSOR
An optical sensor (1) comprises a photodiode (PDn), integrator circuit (10n), a CDS circuit (20n), and holding circuit (30n). The integrator circuit (10n) includes an amplifier (11n), a capacitor (C), and switch (SW). The photodiode (PDn) is disposed on a first substrate (100). Differential pair inp...
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Main Authors | , , |
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Format | Patent |
Language | English French Japanese |
Published |
21.08.2003
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Abstract | An optical sensor (1) comprises a photodiode (PDn), integrator circuit (10n), a CDS circuit (20n), and holding circuit (30n). The integrator circuit (10n) includes an amplifier (11n), a capacitor (C), and switch (SW). The photodiode (PDn) is disposed on a first substrate (100). Differential pair input section (transistors T1, T2) and the capacitor (C) of the amplifier (11n) are disposed on a second substrate (200). A drive section (transistors T5, T6) of the amplifier (11n) and other sections are disposed on a third substrate (300).
La présente invention se rapporte à un capteur optique (1) comportant une photodiode (PDn), un circuit intégrateur (10n), un circuit CDS (20n) et un circuit de maintien (30n). Le circuit intégrateur (10n) comprend un amplificateur (11n), un condensateur (C) et un commutateur (SW). La photodiode (PDn) est disposée sur un premier substrat (100). Une section d'entrée d'une paire différentielle (transistors T1, T2) et le condensateur (C) de l'amplificateur (11n) sont disposés sur un deuxième substrat (200). Une section de commande (transistors T5, T6) de l'amplificateur (11n) et d'autres sections sont disposées sur un troisième substrat (300). |
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AbstractList | An optical sensor (1) comprises a photodiode (PDn), integrator circuit (10n), a CDS circuit (20n), and holding circuit (30n). The integrator circuit (10n) includes an amplifier (11n), a capacitor (C), and switch (SW). The photodiode (PDn) is disposed on a first substrate (100). Differential pair input section (transistors T1, T2) and the capacitor (C) of the amplifier (11n) are disposed on a second substrate (200). A drive section (transistors T5, T6) of the amplifier (11n) and other sections are disposed on a third substrate (300).
La présente invention se rapporte à un capteur optique (1) comportant une photodiode (PDn), un circuit intégrateur (10n), un circuit CDS (20n) et un circuit de maintien (30n). Le circuit intégrateur (10n) comprend un amplificateur (11n), un condensateur (C) et un commutateur (SW). La photodiode (PDn) est disposée sur un premier substrat (100). Une section d'entrée d'une paire différentielle (transistors T1, T2) et le condensateur (C) de l'amplificateur (11n) sont disposés sur un deuxième substrat (200). Une section de commande (transistors T5, T6) de l'amplificateur (11n) et d'autres sections sont disposées sur un troisième substrat (300). |
Author | YAMANAKA, TATSUMI FUJII, YOSHIMARO MIZUNO, SEIICHIRO |
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DocumentTitleAlternate | CAPTEUR OPTIQUE |
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RelatedCompanies | YAMANAKA, TATSUMI HAMAMATSU PHOTONICS K.K FUJII, YOSHIMARO MIZUNO, SEIICHIRO |
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Snippet | An optical sensor (1) comprises a photodiode (PDn), integrator circuit (10n), a CDS circuit (20n), and holding circuit (30n). The integrator circuit (10n)... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS COLORIMETRY ELECTRIC COMMUNICATION TECHNIQUE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT MEASUREMENT OF NUCLEAR OR X-RADIATION MEASURING PHYSICS PICTORIAL COMMUNICATION, e.g. TELEVISION RADIATION PYROMETRY SEMICONDUCTOR DEVICES TESTING |
Title | OPTICAL SENSOR |
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