ALTERNATING PHASE SHIFT MASK

A photoresist mask (30) used in the fabrication of an integrated circuit is described. This mask (30) can include a first portion (32) having a phase characteristic; a second portion (32) being located proximate the first portion (32) and having the same phase characteristic as the first portion (32...

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Bibliographic Details
Main Author KIM, HUNG-EIL
Format Patent
LanguageEnglish
French
Published 07.11.2002
Edition7
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:A photoresist mask (30) used in the fabrication of an integrated circuit is described. This mask (30) can include a first portion (32) having a phase characteristic; a second portion (32) being located proximate the first portion (32) and having the same phase characteristic as the first portion (32); and a segment (38) disposed between the first portion (32) and the second portion (34) to prevent phase conflict between the first portion (32) and the second portion (34). L'invention concerne un masque de photorésist (30) utilisé dans la fabrication de circuit intégré. Ce masque (30) peut comporter une première partie (32) qui présente une caractéristique de phase; une seconde partie (32), proche de la première partie (32), qui présente la même caractéristique de phase que la première partie (32); et un segment (38) placé entre la première partie (32) et la seconde partie (34) pour empêcher les conflits de phase entre la première partie (32) et la seconde partie (34).
Bibliography:Application Number: WO2001US49828