SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
A capacitive element (11) comprising a lower electrode (8), a capacitive insulating film (9) of insulating metal oxide and an upper electrode (10) is formed on a semiconductor substrate (1). A first interconnect layer (14) is formed on a protective insulating film (12) formed to cover the capacitive...
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| Main Authors | , , , |
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| Format | Patent |
| Language | English French Japanese |
| Published |
18.07.2002
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| Edition | 7 |
| Subjects | |
| Online Access | Get full text |
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| Abstract | A capacitive element (11) comprising a lower electrode (8), a capacitive insulating film (9) of insulating metal oxide and an upper electrode (10) is formed on a semiconductor substrate (1). A first interconnect layer (14) is formed on a protective insulating film (12) formed to cover the capacitive element (11). A first interlayer insulating film (15) is formed to cover the first interconnect layer (14). A second interlayer insulating film (17) is formed on the first interlayer insulating film (15) through a barrier film (16) for preventing diffusion of hydrogen provided to overlap the capacitive element (11). A second interconnect layer (19) is formed on the second interlayer insulating film (17). Hydrogen content of the first interlayer insulating film (15) is lower than that of the second interlayer insulating film (17).
Selon la présente invention, un élément capacitif (11), comprenant une électrode inférieure (8), un film isolant capacitif (9) d'un oxyde métallique isolant et une électrode supérieure (10), est formé sur un substrat semiconducteur (1). Une première couche d'interconnexion (14) est formée sur un film isolant de protection (12), conçu pour recouvrir l'élément capacitif (11). Un premier film isolant intercouches (15) est conçu pour recouvrir la première couche d'interconnexion (14). Un second film isolant intercouches (17) est formé sur le premier film isolant intercouches (15) au moyen d'un film barrière (16), conçu pour prévenir toute diffusion d'hydrogène, et destiné à recouvrir l'élément capacitif (11). Une seconde couche d'interconnexion (19) est formée sur le second film isolant intercouches (17). La teneur en hydrogène du premier film isolant intercouches (15) est inférieure à celle du second film isolant intercouches (17). |
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| AbstractList | A capacitive element (11) comprising a lower electrode (8), a capacitive insulating film (9) of insulating metal oxide and an upper electrode (10) is formed on a semiconductor substrate (1). A first interconnect layer (14) is formed on a protective insulating film (12) formed to cover the capacitive element (11). A first interlayer insulating film (15) is formed to cover the first interconnect layer (14). A second interlayer insulating film (17) is formed on the first interlayer insulating film (15) through a barrier film (16) for preventing diffusion of hydrogen provided to overlap the capacitive element (11). A second interconnect layer (19) is formed on the second interlayer insulating film (17). Hydrogen content of the first interlayer insulating film (15) is lower than that of the second interlayer insulating film (17).
Selon la présente invention, un élément capacitif (11), comprenant une électrode inférieure (8), un film isolant capacitif (9) d'un oxyde métallique isolant et une électrode supérieure (10), est formé sur un substrat semiconducteur (1). Une première couche d'interconnexion (14) est formée sur un film isolant de protection (12), conçu pour recouvrir l'élément capacitif (11). Un premier film isolant intercouches (15) est conçu pour recouvrir la première couche d'interconnexion (14). Un second film isolant intercouches (17) est formé sur le premier film isolant intercouches (15) au moyen d'un film barrière (16), conçu pour prévenir toute diffusion d'hydrogène, et destiné à recouvrir l'élément capacitif (11). Une seconde couche d'interconnexion (19) est formée sur le second film isolant intercouches (17). La teneur en hydrogène du premier film isolant intercouches (15) est inférieure à celle du second film isolant intercouches (17). |
| Author | IMANISHI, SADAYUKI FUJII, EIJI NAGANO, YOSHIHISA ITO, TOYOJI |
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| DocumentTitleAlternate | DISPOSITIF SEMICONDUCTEUR ET PROCEDE DE FABRICATION DUDIT DISPOSITIF |
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| RelatedCompanies | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD IMANISHI, SADAYUKI FUJII, EIJI NAGANO, YOSHIHISA ITO, TOYOJI |
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| Snippet | A capacitive element (11) comprising a lower electrode (8), a capacitive insulating film (9) of insulating metal oxide and an upper electrode (10) is formed on... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
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