METHOD FOR ETCH RATE ENHANCEMENT BY BACKGROUND OXYGEN CONTROL IN A SOFT ETCH SYSTEM

• Main Authors: GOLOVATO, STEPHEN, N, WESTENDORP, JOHANNES, F., M
• Format: Patent
• Language: English; French
• Published: 08.02.2001
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Invention is etching substrate (26) containing oxide layer to reduce activated oxygen within plasma (22) and maintain high soft etch rate in series of subsequent etches. Second substrate (28) in form of substrate ring, is utilized in processing chamber (12) and is etched in conjunction with first su...