METHOD FOR FORMING AN OXIDE FILM WITH NON-UNIFORM THICKNESS AT A SILICON SUBSTRATE SURFACE
The invention concerns a method comprising steps which consist in: a) implanting in predetermined zones of the substrate an efficient dose of atoms of a species accelerating the substrate oxidation kinetics; and b) growing by oxidation a silicon oxide film with non-uniform thickness on the substrate...
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Main Authors | , |
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Format | Patent |
Language | English French |
Published |
10.02.2000
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Abstract | The invention concerns a method comprising steps which consist in: a) implanting in predetermined zones of the substrate an efficient dose of atoms of a species accelerating the substrate oxidation kinetics; and b) growing by oxidation a silicon oxide film with non-uniform thickness on the substrate surface. The invention is useful for producing oxide films for MOS transistor grids.
Le procédé comprend: a) l'implantation dans des zones prédéterminées du substrat d'une dose effective d'atomes d'une espèce chimique accélérant la cinétique d'oxydation du substrat; et b) la croissance par oxydation d'une couche d'oxyde de silicium d'épaisseur non-uniforme sur la surface du substrat. Application à la fabrication des couches d'oxyde de grille de transistors MOS. |
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AbstractList | The invention concerns a method comprising steps which consist in: a) implanting in predetermined zones of the substrate an efficient dose of atoms of a species accelerating the substrate oxidation kinetics; and b) growing by oxidation a silicon oxide film with non-uniform thickness on the substrate surface. The invention is useful for producing oxide films for MOS transistor grids.
Le procédé comprend: a) l'implantation dans des zones prédéterminées du substrat d'une dose effective d'atomes d'une espèce chimique accélérant la cinétique d'oxydation du substrat; et b) la croissance par oxydation d'une couche d'oxyde de silicium d'épaisseur non-uniforme sur la surface du substrat. Application à la fabrication des couches d'oxyde de grille de transistors MOS. |
Author | HALIMAOUI, AOMAR GROUILLET, ANDRE |
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DocumentTitleAlternate | PROCEDE DE FORMATION D'UNE COUCHE D'OXYDE D'EPAISSEUR NON-UNIFORME A LA SURFACE D'UN SUBSTRAT DE SILICIUM |
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Notes | Application Number: WO1999FR01756 |
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RelatedCompanies | HALIMAOUI, AOMAR GROUILLET, ANDRE FRANCE TELECOM |
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Snippet | The invention concerns a method comprising steps which consist in: a) implanting in predetermined zones of the substrate an efficient dose of atoms of a... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
Title | METHOD FOR FORMING AN OXIDE FILM WITH NON-UNIFORM THICKNESS AT A SILICON SUBSTRATE SURFACE |
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