Gate driving circuit for insulated gate-type power semiconductor element

• Main Authors: Ishikawa, Junichiro, Otsu, Kazuhiro
• Format: Patent
• Language: English
• Published: 08.05.2018
• Subjects: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS; BASIC ELECTRIC ELEMENTS; BASIC ELECTRONIC CIRCUITRY; CONTROL OR REGULATION THEREOF; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERATION; PULSE TECHNIQUE; SEMICONDUCTOR DEVICES

A gate driving circuit for an insulated gate-type power semiconductor element includes an Nch MOSFET which turns on the insulated gate-type power semiconductor element, a Pch MOSFET which turns off the insulated gate-type power semiconductor element, a control circuit which turns on the Nch MOSFET b...