Semiconductor device isolation via depleted coupling layer

• Main Authors: Zhu Ronghua, Zuo Jiang-Kai, Yang Hongning, Lin Xin
• Format: Patent
• Language: English
• Published: 10.04.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A device includes a semiconductor substrate, a doped isolation barrier disposed in the semiconductor substrate and having a first conductivity type, a body region disposed in the semiconductor substrate within the doped isolation barrier, having the first conductivity type, and in which a channel is...