Semiconductor device isolation via depleted coupling layer
A device includes a semiconductor substrate, a doped isolation barrier disposed in the semiconductor substrate and having a first conductivity type, a body region disposed in the semiconductor substrate within the doped isolation barrier, having the first conductivity type, and in which a channel is...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
10.04.2018
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Subjects | |
Online Access | Get full text |
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