Thin film transistor substrate and method of manufacturing the same

A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between...

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Bibliographic Details
Main Authors Park Sang-Ho, Shim Dong-Hwan, Lee Min-Jung, Khang Yoon-Ho, Yu Se-Hwan, Lee Yong-Su, Kang Su-Hyoung
Format Patent
LanguageEnglish
Published 27.03.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode.
Bibliography:Application Number: US201615006295