Semiconductor device with vertically integrated pHEMTs

• Main Authors: Schwartz Dana A, Hurtt Sheila K, Nevers Corey A
• Format: Patent
• Language: English
• Published: 20.03.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present disclosure relates to a semiconductor device with vertically integrated pseudomorphic high electron mobility transistors (pHEMTs). The disclosed semiconductor device includes a substrate, a lower pHEMT structure with a lower pHEMT, an isolation layer, and an upper pHEMT structure with an...