Semiconductor device for electrostatic discharge protection

• Main Authors: Tai Kun-Yu, Wang Li-Cih, Tang Tien-Hao
• Format: Patent
• Language: English
• Published: 23.01.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device for electrostatic discharge (ESD) protection includes a doped well, a drain region, a source region, a first doped region and a guard ring. The doped well is disposed in a substrate and has a first conductive type. The drain region is disposed in the doped well and has a second conductive type. The source region is disposed in the doped well and has the second conductive type, wherein the source region is separated from the drain region. The doped region is disposed in the doped well between the drain region and the source region, wherein the doped region has the first conductive type and is in contact with the doped well and the source region. The guard ring is disposed in the doped well and has the first conductive type.