Field-effect transistor with aggressively strained fins

• Main Authors: Reznicek Alexander, Hashemi Pouya, Khakifirooz Ali
• Format: Patent
• Language: English
• Published: 02.01.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

In a method for fabricating a field-effect transistor (FET) structure, forming a shallow trench isolation (STI) structure on a semiconductor substrate, wherein the STI structure includes dielectric structures that form one or more dielectric walled aspect ratio trapping (ART) trenches. The method fu...