Semiconductor memory device

• Main Authors: Sato Atsuhiro, Maeda Hiroyuki, Minami Toshifumi, Kamata Hideyuki, Baba Yasuyuki, Shinohara Hiroshi, Saito Shinji, Yonehama Keisuke
• Format: Patent
• Language: English
• Published: 19.09.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

According to one embodiment, a semiconductor memory device includes: a semiconductor substrate; a first semiconductor pillar above the semiconductor substrate; a first insulating layer comprising a first section and a second section, the first section being in contact with the semiconductor substrate and a bottom of the first semiconductor pillar, and the second section covering a side of the first semiconductor pillar; conductive layers and second insulating layers stacked one by one above the semiconductor substrate and covering the second section of the first insulating layer; a first plug on the first semiconductor pillar; and an interconnect on the first plug.