Polycrystalline silicon deposition method

The deposition of polycrystalline silicon onto heated filament rods in a Siemens process is improved by supplying reaction gas at least partially through nozzles in the vertical wall of the deposition reactor, at an angle of 0° to 45° to the reactor wall, towards the base plate of the reactor.

Saved in:
Bibliographic Details
Main Authors Klose Goeran, Kraus Heinz, Weiss Tobias
Format Patent
LanguageEnglish
Published 22.08.2017
Subjects
Online AccessGet full text

Cover

Loading…
Abstract The deposition of polycrystalline silicon onto heated filament rods in a Siemens process is improved by supplying reaction gas at least partially through nozzles in the vertical wall of the deposition reactor, at an angle of 0° to 45° to the reactor wall, towards the base plate of the reactor.
AbstractList The deposition of polycrystalline silicon onto heated filament rods in a Siemens process is improved by supplying reaction gas at least partially through nozzles in the vertical wall of the deposition reactor, at an angle of 0° to 45° to the reactor wall, towards the base plate of the reactor.
Author Kraus Heinz
Klose Goeran
Weiss Tobias
Author_xml – fullname: Klose Goeran
– fullname: Kraus Heinz
– fullname: Weiss Tobias
BookMark eNrjYmDJy89L5WTQDMjPqUwuqiwuSczJycxLVSjOzMlMzs9TSEktyC_OLMkEMnNTSzLyU3gYWNMSc4pTeaE0N4OCm2uIs4cuUGF8anFBYnJqXmpJfGiwpbmxhamxgZORMRFKAPd5KwQ
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
ExternalDocumentID US9738530B2
GroupedDBID EVB
ID FETCH-epo_espacenet_US9738530B23
IEDL.DBID EVB
IngestDate Fri Jul 19 12:04:53 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_US9738530B23
Notes Application Number: US201414777643
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170822&DB=EPODOC&CC=US&NR=9738530B2
ParticipantIDs epo_espacenet_US9738530B2
PublicationCentury 2000
PublicationDate 20170822
PublicationDateYYYYMMDD 2017-08-22
PublicationDate_xml – month: 08
  year: 2017
  text: 20170822
  day: 22
PublicationDecade 2010
PublicationYear 2017
RelatedCompanies Wacker Chemie AG
RelatedCompanies_xml – name: Wacker Chemie AG
Score 3.0998938
Snippet The deposition of polycrystalline silicon onto heated filament rods in a Siemens process is improved by supplying reaction gas at least partially through...
SourceID epo
SourceType Open Access Repository
SubjectTerms CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
COMPOUNDS THEREOF
DIFFUSION TREATMENT OF METALLIC MATERIAL
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Title Polycrystalline silicon deposition method
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170822&DB=EPODOC&locale=&CC=US&NR=9738530B2
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQMUu2NEoyTUzVBfan03RNTC1SdC2TzRJ1zZPMzQ2A7Q0LYG8OtNrCz8wj1MQrwjSCiSETthcGfE5oOfhwRGCOSgbm9xJweV2AGMRyAa-tLNZPygQK5du7hdi6qEF7x4bmoAPM1VycbF0D_F38ndWcnW1Dg9X8goCdJWNgxWTgBCytWYGtaHNwny3MCbQppQC5RnETZGALABqWVyLEwJSaJ8zA6Qy7eE2YgcMXOt8NZEKzXrEIg2ZAfk5lclElsDUHOkY7VaE4E-jU_DyFlFTYwisFyHXQogwKbq4hzh66QIl4uP_iQ4PhrjMWY2ABdvtTJRgUzCzMgCVAamKahXmKiWWKZaIZsOmflpaWnGiUmpSWaCjJIInTGCk8ctIMXKCAAo2LGhnJMLCUFJWmygIr1pIkOXCQAACWDn56
link.rule.ids 230,309,783,888,25577,76883
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQMUu2NEoyTUzVBfan03RNTC1SdC2TzRJ1zZPMzQ2A7Q0LYG8OtNrCz8wj1MQrwjSCiSETthcGfE5oOfhwRGCOSgbm9xJweV2AGMRyAa-tLNZPygQK5du7hdi6qEF7x4bmoAPM1VycbF0D_F38ndWcnW1Dg9X8goCdJWNgxWTgBCytWYEtbAtwTynMCbQppQC5RnETZGALABqWVyLEwJSaJ8zA6Qy7eE2YgcMXOt8NZEKzXrEIg2ZAfk5lclElsDUHOkY7VaE4E-jU_DyFlFTYwisFyHXQogwKbq4hzh66QIl4uP_iQ4PhrjMWY2ABdvtTJRgUzCzMgCVAamKahXmKiWWKZaIZsOmflpaWnGiUmpSWaCjJIInTGCk8cvIMnB4hvj7xPp5-3tIMXKBAA42RGhnJMLCUFJWmygIr2ZIkOXDwAACroIFq
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Polycrystalline+silicon+deposition+method&rft.inventor=Klose+Goeran&rft.inventor=Kraus+Heinz&rft.inventor=Weiss+Tobias&rft.date=2017-08-22&rft.externalDBID=B2&rft.externalDocID=US9738530B2