Method of patterning dopant films in high-k dielectrics in a soft mask integration scheme
A method of fabricating advanced node field effect transistors using a replacement metal gate process. The method includes dopant a high-k dielectric directly or indirectly by using layers composed of multi-layer thin film stacks, or in other embodiments, by a single blocking layer. By taking advant...
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Format | Patent |
Language | English |
Published |
01.08.2017
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Abstract | A method of fabricating advanced node field effect transistors using a replacement metal gate process. The method includes dopant a high-k dielectric directly or indirectly by using layers composed of multi-layer thin film stacks, or in other embodiments, by a single blocking layer. By taking advantage of unexpected etch selectivity of the multi-layer stack or the controlled etch process of a single layer stack, etch damage to the high-k may be avoided and work function metal thicknesses can be tightly controlled which in turn allows field effect transistors with low Tinv (inverse of gate capacitance) mismatch. |
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AbstractList | A method of fabricating advanced node field effect transistors using a replacement metal gate process. The method includes dopant a high-k dielectric directly or indirectly by using layers composed of multi-layer thin film stacks, or in other embodiments, by a single blocking layer. By taking advantage of unexpected etch selectivity of the multi-layer stack or the controlled etch process of a single layer stack, etch damage to the high-k may be avoided and work function metal thicknesses can be tightly controlled which in turn allows field effect transistors with low Tinv (inverse of gate capacitance) mismatch. |
Author | Krishnan Siddarth A Kannan Balaji Rajaram Rekha Kwon Unoh Jagannathan Hemanth Ando Takashi |
Author_xml | – fullname: Kannan Balaji – fullname: Krishnan Siddarth A – fullname: Ando Takashi – fullname: Jagannathan Hemanth – fullname: Kwon Unoh – fullname: Rajaram Rekha |
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Snippet | A method of fabricating advanced node field effect transistors using a replacement metal gate process. The method includes dopant a high-k dielectric directly... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | Method of patterning dopant films in high-k dielectrics in a soft mask integration scheme |
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