Graphoepitaxy directed self-assembly process for semiconductor fin formation
Guiding pattern portions are formed on a surface of a lithographic material stack that is disposed on a surface of a semiconductor substrate. A copolymer layer is then formed between each neighboring pair of guiding pattern portions and thereafter a directed self-assembly process is performed that c...
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Format | Patent |
Language | English |
Published |
23.05.2017
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Abstract | Guiding pattern portions are formed on a surface of a lithographic material stack that is disposed on a surface of a semiconductor substrate. A copolymer layer is then formed between each neighboring pair of guiding pattern portions and thereafter a directed self-assembly process is performed that causes phase separation of the various polymeric domains of the copolymer layer. Each guiding pattern portion is selectively removed, followed by the removal of each first phase separated polymeric domain. Each second phase separated polymeric domain remains and is used as an etch mask in forming semiconductor fins in an upper semiconductor material portion of the semiconductor substrate. |
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AbstractList | Guiding pattern portions are formed on a surface of a lithographic material stack that is disposed on a surface of a semiconductor substrate. A copolymer layer is then formed between each neighboring pair of guiding pattern portions and thereafter a directed self-assembly process is performed that causes phase separation of the various polymeric domains of the copolymer layer. Each guiding pattern portion is selectively removed, followed by the removal of each first phase separated polymeric domain. Each second phase separated polymeric domain remains and is used as an etch mask in forming semiconductor fins in an upper semiconductor material portion of the semiconductor substrate. |
Author | Cheng Joy Colburn Matthew E Liu Chi-Chun Tsai HsinYu Guillorn Michael A Tjio Melia |
Author_xml | – fullname: Cheng Joy – fullname: Tsai HsinYu – fullname: Liu Chi-Chun – fullname: Tjio Melia – fullname: Guillorn Michael A – fullname: Colburn Matthew E |
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Snippet | Guiding pattern portions are formed on a surface of a lithographic material stack that is disposed on a surface of a semiconductor substrate. A copolymer layer... |
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SubjectTerms | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES TESTING |
Title | Graphoepitaxy directed self-assembly process for semiconductor fin formation |
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