Chemical mechanical polishing pad composite polishing layer formulation

• Main Authors: Miller Jeffrey B, Stack Marc R, Hendron Jeffrey James, Brugarolas Brufau Teresa, Tran Tony Quan, Lugo Diego, Kozhukh Julia, Qian Bainian, Jacob George C
• Format: Patent
• Language: English
• Published: 25.04.2017
• Subjects: AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING; BASIC ELECTRIC ELEMENTS; DRESSING OR CONDITIONING OF ABRADING SURFACES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GRINDING; INDUCTANCES; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; MAGNETS; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS; OPTICS; PERFORMING OPERATIONS; PHYSICS; POLISHING; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES; SEMICONDUCTOR DEVICES; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR; SHAPING OR JOINING OF PLASTICS; TRANSFORMERS; TRANSPORTING; WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL

A chemical mechanical polishing pad is provided containing: a polishing layer having a polishing surface; wherein the polishing layer comprises a first continuous non-fugitive polymeric phase and a second non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has a plurality of periodic recesses; wherein the plurality of periodic recesses are occupied with the second non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has an open cell porosity of ≦6 vol %; wherein the second non-fugitive polymeric phase contains an open cell porosity of ≧10 vol %; and, wherein the polishing surface is adapted for polishing a substrate.