Metal line structure and method

A device comprises a first rounded metal line in a metallization layer over a substrate, a second rounded metal line in the metallization layer, a first air gap between sidewalls of the first rounded metal line and the second metal line, a first metal line in the metallization layer, wherein a top s...

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Bibliographic Details
Main Authors Lin Tien-Lu, Yang Tai-I, Wang Yung-Chih, Liao Yu-Chieh, Liu Hsiang-Wei, Chen Jian-Hua, Kao Hsiang-Lun
Format Patent
LanguageEnglish
Published 28.02.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A device comprises a first rounded metal line in a metallization layer over a substrate, a second rounded metal line in the metallization layer, a first air gap between sidewalls of the first rounded metal line and the second metal line, a first metal line in the metallization layer, wherein a top surface of the first metal line is higher than a top surface of the second rounded metal line and a bottom surface of the first metal line is substantially level with a bottom surface of the second rounded metal line and a second air gap between sidewalls of the second rounded metal line and the first metal line.
Bibliography:Application Number: US201414334929