Doping an absorber layer of a photovoltaic device via diffusion from a window layer

• Main Authors: Gossman Robert Dwayne, Feldman-Peabody Scott Daniel
• Format: Patent
• Language: English
• Published: 07.02.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Methods for doping an absorbent layer of a p-n heterojunction in a thin film photovoltaic device are provided. The method can include depositing a window layer on a transparent substrate, where the window layer includes at least one dopant (e.g., copper). A p-n heterojunction can be formed on the wi...