Non-volatile memory
A non-volatile memory (50) is disclosed. A second electrode (56) is provided. A first electrode (51) is also provided. A recording layer having a plurality of phase change cells (54) variable in resistance is provided between the first electrode (51) and the second electrode (56). A non-uniform tunn...
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| Main Authors | , |
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| Format | Patent |
| Language | English |
| Published |
15.11.2016
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| Subjects | |
| Online Access | Get full text |
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| Abstract | A non-volatile memory (50) is disclosed. A second electrode (56) is provided. A first electrode (51) is also provided. A recording layer having a plurality of phase change cells (54) variable in resistance is provided between the first electrode (51) and the second electrode (56). A non-uniform tunnel barrier (540) is provided adjacent each of the recording layer and the first electrode. In use, the first electrode is in electrical communication with the non-uniform tunnel barrier, the first electrode for electrically communicating with the second electrode via the non-uniform tunnel barrier. |
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| AbstractList | A non-volatile memory (50) is disclosed. A second electrode (56) is provided. A first electrode (51) is also provided. A recording layer having a plurality of phase change cells (54) variable in resistance is provided between the first electrode (51) and the second electrode (56). A non-uniform tunnel barrier (540) is provided adjacent each of the recording layer and the first electrode. In use, the first electrode is in electrical communication with the non-uniform tunnel barrier, the first electrode for electrically communicating with the second electrode via the non-uniform tunnel barrier. |
| Author | Boeve Hans Attenborough Karen |
| Author_xml | – fullname: Boeve Hans – fullname: Attenborough Karen |
| BookMark | eNrjYmDJy89L5WQQ9svP0y3Lz0ksycxJVchNzc0vquRhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGhwZYmlmYmlgZORsZEKAEAso8iDQ |
| ContentType | Patent |
| DBID | EVB |
| DatabaseName | esp@cenet |
| DatabaseTitleList | |
| Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Medicine Chemistry Sciences |
| ExternalDocumentID | US9496490B2 |
| GroupedDBID | EVB |
| ID | FETCH-epo_espacenet_US9496490B23 |
| IEDL.DBID | EVB |
| IngestDate | Fri Aug 23 06:54:27 EDT 2024 |
| IsOpenAccess | true |
| IsPeerReviewed | false |
| IsScholarly | false |
| Language | English |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-epo_espacenet_US9496490B23 |
| Notes | Application Number: US20050720826 |
| OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20161115&DB=EPODOC&CC=US&NR=9496490B2 |
| ParticipantIDs | epo_espacenet_US9496490B2 |
| PublicationCentury | 2000 |
| PublicationDate | 20161115 |
| PublicationDateYYYYMMDD | 2016-11-15 |
| PublicationDate_xml | – month: 11 year: 2016 text: 20161115 day: 15 |
| PublicationDecade | 2010 |
| PublicationYear | 2016 |
| RelatedCompanies | NXP B.V Boeve Hans Attenborough Karen |
| RelatedCompanies_xml | – name: Boeve Hans – name: NXP B.V – name: Attenborough Karen |
| Score | 3.0594938 |
| Snippet | A non-volatile memory (50) is disclosed. A second electrode (56) is provided. A first electrode (51) is also provided. A recording layer having a plurality of... |
| SourceID | epo |
| SourceType | Open Access Repository |
| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | Non-volatile memory |
| URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20161115&DB=EPODOC&locale=&CC=US&NR=9496490B2 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQMUgFJYRkY13DVNBoFTDF6CYCaxndJAvTVMOU1DRgExk0oO_rZ-YRauIVYRrBxJAJ2wsDPie0HHw4IjBHJQPzewm4vC5ADGK5gNdWFusnZQKF8u3dQmxd1KC9Y2DzBdjCUXNxsnUN8Hfxd1ZzdrYNDVbzC7K1NLE0M7E0cAKW1qzAVrQ5KDO4hjmBNqUUINcoboIMbAFAw_JKhBiYUvOEGTidYRevCTNw-ELnu4FMaNYrFmEQ9svP0wWWJUDH5aQq5IIWyFaKMii4uYY4e-gCTY-H-yQ-NBjuDmMxBhZgBz9VgkHBKC0RmLPME03TjAxN0oyMLCwSTZMNkyyMUy1B_RMTSQZJnMZI4ZGTZuACBQlo55yhqQwDS0lRaaossAotSZIDex4A2XBzxw |
| link.rule.ids | 230,309,783,888,25576,76876 |
| linkProvider | European Patent Office |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQMUgFJYRkY13DVNBoFTDF6CYCaxndJAvTVMOU1DRgExk0oO_rZ-YRauIVYRrBxJAJ2wsDPie0HHw4IjBHJQPzewm4vC5ADGK5gNdWFusnZQKF8u3dQmxd1KC9Y2DzBdjCUXNxsnUN8Hfxd1ZzdrYNDVbzC7K1NLE0M7E0cAKW1qzAFrY5KDO4hjmBNqUUINcoboIMbAFAw_JKhBiYUvOEGTidYRevCTNw-ELnu4FMaNYrFmEQ9svP0wWWJUDH5aQq5IIWyFaKMii4uYY4e-gCTY-H-yQ-NBjuDmMxBhZgBz9VgkHBKC0RmLPME03TjAxN0oyMLCwSTZMNkyyMUy1B_RMTSQZJnMZI4ZGTZ-D0CPH1iffx9POWZuACBQ9oF52hqQwDS0lRaaossDotSZIDBwQAcYV2ug |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Non-volatile+memory&rft.inventor=Boeve+Hans&rft.inventor=Attenborough+Karen&rft.date=2016-11-15&rft.externalDBID=B2&rft.externalDocID=US9496490B2 |