Three-dimensional germanium-based semiconductor devices formed on globally or locally isolated substrates

• Main Authors: Beattie Bruce E, Cappellani Annalisa, Pathi Pragyansri, Pethe Abhijit Jayant
• Format: Patent
• Language: English
• Published: 18.10.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Three-dimensional germanium-based semiconductor devices formed on globally or locally isolated substrates are described. For example, a semiconductor device includes a semiconductor substrate. An insulating structure is disposed above the semiconductor substrate. A three-dimensional germanium-contai...